Chemical Coating of Microwell for Electrochemical Detection Device
First Claim
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1. A method of fabricating a chemical detection device, comprising:
- forming a microwell above a CMOS device, wherein the microwell comprises a bottom surface and sidewalls;
applying a first chemical to be selectively attached to the bottom surface of the microwell;
forming a metal oxide layer on the sidewalls of the microwell; and
applying a second chemical to be selectively attached to the sidewalls of the microwell, wherein the second chemical lacks an affinity to the first chemical.
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Abstract
The described embodiments may provide a method of fabricating a chemical detection device. The method may comprise forming a microwell above a CMOS device. The microwell may comprise a bottom surface and sidewalls. The method may further comprise applying a first chemical to be selectively attached to the bottom surface of the microwell, forming a metal oxide layer on the sidewalls of the microwell, and applying a second chemical to be selectively attached to the sidewalls of the microwell. The second chemical may lack an affinity to the first chemical.
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Citations
23 Claims
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1. A method of fabricating a chemical detection device, comprising:
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forming a microwell above a CMOS device, wherein the microwell comprises a bottom surface and sidewalls; applying a first chemical to be selectively attached to the bottom surface of the microwell; forming a metal oxide layer on the sidewalls of the microwell; and applying a second chemical to be selectively attached to the sidewalls of the microwell, wherein the second chemical lacks an affinity to the first chemical. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A chemical detection device, comprising:
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a microwell having a bottom surface and sidewalls, the bottom surface being covered by a first chemical, the sidewalls being covered by a metal oxide layer and a second chemical on top of the metal oxide layer, wherein the second chemical lacks an affinity to the first chemical; and a CMOS device placed underneath the bottom of the microwell. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method comprising:
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forming a microwell above a CMOS device, wherein the microwell comprises a bottom surface and sidewalls, and the microwell is configured to receive a solid phase support that has a plurality of analytes attached thereto; applying a first chemical to be selectively attached to the bottom surface of the microwell; forming a metal oxide layer on the sidewalls of the microwell; and applying a second chemical to be selectively attached to the sidewalls of the microwell, wherein the second chemical lacks an affinity to the first chemical, wherein the CMOS device is configured to sense a charge at the bottom surface of the microwell due to one or more byproducts generated by at least one chemical reaction with the plurality of the analytes, wherein the one or more byproducts lack an affinity to the sidewalls of the microwell due to the second chemical. - View Dependent Claims (21, 22, 23)
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Specification