MULTILAYER FILM FORMATION METHOD AND FILM DEPOSITION APPARATUS USED WITH THE METHOD

• US 20120045864A1
• Filed: 08/18/2011
• Published: 02/23/2012
• Est. Priority Date: 08/19/2010
• Status: Abandoned Application

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: WADA, Takehito
• Application Number:
  US13/212,571
• Publication Number:
  US 20120045864A1
• Time in Patent Office: Days
• US Class Current: 438/62
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 31/03762 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/206 Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A multilayer film formation method and film deposition apparatus that suppress fluctuations in thickness, stabilize product quality, and reduce costs. The method employs gas-phase chemical reaction to form a multilayer film having at least three layers using raw material gases of differing compositions. A film formation apparatus is provided having at least first and second film deposition portions along a transfer path of the substrate, and having a supply/recovery portion for the substrate at either end of the transfer path; continuously transferring the substrate along the transfer path at a first speed during a first transfer and film deposition to form a plurality of stacked layers including first and second layers; and continuously transferring the substrate along the transfer path at a second speed during a second transfer and film deposition to form a third layer having the third composition that differs from those of the first and second layers.

Claims

1. A multilayer film formation method that employs gas-phase chemical reaction to form a multilayer film having at least three layers on at least one surface of a substrate using raw material gases of differing compositions, the method comprising the steps of:

providing a film formation apparatus having at least first and second film deposition portions along a transfer path of the substrate, and having a supply/recovery portion for the substrate at either end of the transfer path;

continuously transferring the substrate along the transfer path at a first speed during a first transfer and film deposition while simultaneously supplying first and second raw material gases having first and second compositions, respectively, that are mutually similar compositions to each of the first and second film deposition portions to form a plurality of stacked layers including first and second layers having said first and second compositions; and

continuously transferring the substrate along the transfer path at a second speed during a second transfer and film deposition, performed before or after the first transfer and film deposition, while supplying third raw material gases having a third composition that differs from those of the first and second raw material gases, to each of the first and second film deposition portions to form a third layer having said third composition that differs from those of the first and second layers.

2. The multilayer film formation method according to claim 1, wherein the third layer has a thickness that is greater than that of a plurality of layers that includes the first and second layers.

3. The multilayer film formation method according to claim 1, wherein the third layer has a thickness that is at least two times greater than that of a plurality of layers that includes the first and second layers, and the second transfer and film deposition that forms the third layer is implemented divided into a plurality of times.

4. The multilayer film formation method according to claim 1, wherein the first and second raw material gases include added constituents common to each other which differ in amounts, while the third raw material gases do not include the added constituents.

5. The multilayer film formation method according to claim 4, wherein the multilayer film is a thin film photovoltaic conversion element having a p-i-n junction structure, wherein the first and second layers respectively are a p-type semiconductor layer and p/i interface layer or an n-type semiconductor layer and n/i interface layer, wherein the added constituent is a doping gas corresponding respectively to each type, and wherein the third layer is an i-type semiconductor layer.

6. The multilayer film formation method according to claim 1, wherein the first and second raw material gases each comprise a main gas that is the same gas but that differs in its respective concentration, and wherein only the layer farther from the third layer is formed from raw material gasses that include added constituents, while the third raw material gases do not include said added constituents.

7. The multilayer film formation method according to claim 6, wherein the multilayer film is a thin film photovoltaic conversion element having a p-i-n junction structure, wherein the first and second layers are respectively a p-type semiconductor layer and p/i interface layer or an n-type semiconductor layer and n/i interface layer, wherein the added constituent is a doping gas corresponding respectively to each type, and wherein the third layer is an i-type semiconductor layer.

8. The multilayer film formation method according to claim 1, wherein the multilayer film is a thin film photovoltaic conversion element having a p-i-n junction structure, wherein the first and second layers respectively are a p-type semiconductor layer and p/i interface layer or an n-type semiconductor layer and n/i interface layer, and wherein the third layer is an i-type semiconductor layer.

9. The multilayer film formation method according to claim 1, wherein the first transfer and film deposition is accomplished in a plurality of first transfer and film depositions, while reciprocally transferring the substrate between the supply/recovery portions at either end of the transfer path.

10. The multilayer film formation method according to claim 9, wherein the substrate is a band-like substrate having a band structure, wherein the supply/recovery portions of the film deposition apparatus include respective unwinding/winding portions for accommodating the substrate, and wherein each of the first and second transfer and film depositions includes unwinding the substrate from a roll in one unwinding/winding portion and winding the substrate on which a film is deposited in each of the film deposition portions onto a roll in another unwinding/winding portion.

11. The multilayer film formation method according to claim 9, wherein the substrate is a sheet substrate, wherein the supply/recovery portions comprise substrate accumulation devices, and wherein each of the first and second transfer and film depositions includes feeding the substrate from one accumulation device and accumulating substrates on which a film is deposited in each of the film deposition portions in another accumulation device.

12. The multilayer film formation method according to claim 1, wherein the first and second film deposition portions respectively comprise first and second film deposition chambers in communication with each other via slits through which the substrate can pass;

and at least one film deposition electrode pair arranged in parallel inside of each of respective ones of the first and second film deposition chambers.

13. The multilayer film formation method according to claim 12, at least two film deposition electrode pairs are arranged in parallel inside at least one of the first and second film deposition chambers.

14. The multilayer film formation method according to claim 1, wherein the first and second film deposition portions respectively comprise at least two film deposition electrode pairs arranged in parallel inside a common vacuum chamber.

15. A film deposition apparatus for implementing a multilayer film formation method according to claim 1, comprising:

transfer means for continuously transferring a substrate at a predetermined transfer speed in both forward and reverse directions along a transfer path of the substrate;

first and second supply/recovery portions disposed at first and second ends of the transfer path of the substrate that supply and recover the substrate;

first and second film deposition portions disposed along the transfer path of the substrate, in communication with each other via slits through which the substrate can pass;

a gas supply unit for individually supplying raw material gas to the first and second film deposition portions; and

a vacuum evacuation unit for individually evacuating the first and second film deposition portions,

wherein the gas supply unit includes a unit that switches between a first gas supply mode so that first and second raw material gases with mutually similar compositions are simultaneously supplied to the first and second film deposition portions, and a second gas supply mode so that third raw material gases having a composition differing from those of the first and second raw material gases are supplied to the first and second film deposition portions.

16. The film deposition apparatus according to claim 15, wherein the gas supply unit comprises:

first and second gas supply pipes that supply raw material gas to the first and second film deposition portions;

first and second branch pipe groups connected to the first and second gas supply pipes, respectively;

a multiple of gas supply sources connected in parallel for each gas type to the first and second branch pipe groups;

a flow control unit disposed on each branch pipe of the first and second branch pipe groups; and

gas supply valves provided on respective branch pipes that can individually open and close each branch pipe as a switching unit.

17. The film deposition apparatus according to claim 16, wherein the substrate is an elongated, band-like flexible substrate, wherein the first and second supply/recovery portions include first and second core drive devices for unwinding the substrate from a roll and winding the substrate onto a roll, wherein the transfer device includes a first feed roller disposed between the first film deposition portion and first core drive device, a second feed roller disposed between the second film deposition portion and second core drive device, a first motor that drives the first feed roller, and a second motor that drives the second feed roller, and wherein each of the first and second motors rotate in both forward and reverse directions and have a rotation speed that is variable.

18. The film deposition apparatus according to claim 17, wherein the transfer device is such that the rotation axis of each of the first and second core drive devices is oriented in a perpendicular direction so that film deposition is accomplished while transferring the substrate in a vertical position in a horizontal direction.

19. The multilayer film formation method according to claim 1, wherein the first and second film deposition portions respectively comprise at least two film deposition electrode pairs arranged inside a common vacuum chamber.