SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device, comprising:
- a first thin film transistor; and
a second thin film transistor different from said first thin film transistor,wherein said first thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer,wherein said second thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, andwherein said semiconductor layer of said first thin film transistor is different from said semiconductor layer of said second thin film transistor in at least any one of a thickness, a layer structure, and the crystallization ratio, or said gate insulating layer of said first thin film transistor is different from said gate insulating layer of said second thin film transistor in at least any one of a thickness, a layer structure, and a dielectric constant.
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Abstract
A semiconductor device 100 according to the present invention includes a TFT 120 and a TFT 140. The TFT 120 has a gate electrode 122, a semiconductor layer 130 including a microcrystalline semiconductor film 132, and a gate insulating layer 124 provided between the gate electrode 122 and the semiconductor layer 130. The TFT 140 has a gate electrode 142, a semiconductor layer 150 including a microcrystalline semiconductor film 152, and a gate insulating layer 144 provided between the gate electrode 142 and the semiconductor layer 150. The thickness and layer structure of the semiconductor layer 150 of the TFT 140 are different from those of the semiconductor layer 130 of the TFT 120.
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Citations
15 Claims
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1. A semiconductor device, comprising:
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a first thin film transistor; and a second thin film transistor different from said first thin film transistor, wherein said first thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, wherein said second thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, and wherein said semiconductor layer of said first thin film transistor is different from said semiconductor layer of said second thin film transistor in at least any one of a thickness, a layer structure, and the crystallization ratio, or said gate insulating layer of said first thin film transistor is different from said gate insulating layer of said second thin film transistor in at least any one of a thickness, a layer structure, and a dielectric constant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 10, 11)
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9. A semiconductor device, comprising:
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a first thin film transistor; and a second thin film transistor different from said first thin film transistor, wherein said first thin film transistor has a gate electrode, a semiconductor layer including an amorphous semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, wherein said second thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film and including no amorphous semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, and wherein said semiconductor layer of said first thin film transistor is different from said semiconductor layer of said second thin film transistor in at least any one of a thickness, a layer structure, and the crystallization ratio.
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12. A semiconductor device comprising:
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a thin film transistor; and a diode, wherein said thin film transistor has a semiconductor layer including a microcrystalline semiconductor film, and wherein said diode has a semiconductor layer including a microcrystalline semiconductor film and an amorphous semiconductor film. - View Dependent Claims (13, 14, 15)
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Specification