SEMICONDUCTOR DEVICE

• US 20120049193A1
• Filed: 02/02/2010
• Published: 03/01/2012
• Est. Priority Date: 02/06/2009
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Saito, Yuichi, Moriguchi, Masao, Yoshida, Tokuo, Hoshino, Atsuyuki
• Application Number:
  US13/147,920
• Publication Number:
  US 20120049193A1
• Time in Patent Office: Days
• US Class Current: 257/59
• CPC Class Codes: C23F 1/26 for etching refractory metals
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1229 with different crystal properties within a device or between different devices
• CPC Class Codes: H01L 27/1233 with different thicknesses of the active layer in different devices
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device 100 according to the present invention includes a TFT 120 and a TFT 140. The TFT 120 has a gate electrode 122, a semiconductor layer 130 including a microcrystalline semiconductor film 132, and a gate insulating layer 124 provided between the gate electrode 122 and the semiconductor layer 130. The TFT 140 has a gate electrode 142, a semiconductor layer 150 including a microcrystalline semiconductor film 152, and a gate insulating layer 144 provided between the gate electrode 142 and the semiconductor layer 150. The thickness and layer structure of the semiconductor layer 150 of the TFT 140 are different from those of the semiconductor layer 130 of the TFT 120.

Claims

1. A semiconductor device, comprising:

a first thin film transistor; and

a second thin film transistor different from said first thin film transistor,

wherein said first thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer,

wherein said second thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, and

wherein said semiconductor layer of said first thin film transistor is different from said semiconductor layer of said second thin film transistor in at least any one of a thickness, a layer structure, and the crystallization ratio, or said gate insulating layer of said first thin film transistor is different from said gate insulating layer of said second thin film transistor in at least any one of a thickness, a layer structure, and a dielectric constant.

2. The semiconductor device according to claim 1, wherein said semiconductor layer of said first thin film transistor further comprises an amorphous semiconductor film.

3. The semiconductor device according to claim 2, wherein said semiconductor layer of said second thin film transistor further comprises an amorphous semiconductor film, and

wherein said amorphous semiconductor film of said first thin film transistor is thicker than said amorphous semiconductor film of said second thin film transistor.

4. The semiconductor device according to claim 1, wherein a thickness of said microcrystalline semiconductor film of said first thin film transistor is substantially equal to a thickness of said microcrystalline semiconductor film of said second thin film transistor.

5. The semiconductor device according to claim 1, wherein a thickness of said microcrystalline semiconductor film of said first thin film transistor is different from a thickness of said microcrystalline semiconductor film of said second thin film transistor.

6. The semiconductor device according to claim 1, wherein said gate insulating layer of said first thin film transistor is thicker than said gate insulating layer of said second thin film transistor.

7. The semiconductor device according to claim 1, wherein said gate insulating layer of said first thin film transistor has a multilayer structure, and

a composition of a portion of said gate insulating film that is in contact with said semiconductor layer in said first thin film transistor is different from a composition of a portion of said gate insulating film that is in contact with said semiconductor layer in said second thin film transistor.

8. The semiconductor device according to claim 1, wherein the crystallization ratio of said microcrystalline semiconductor film of said first thin film transistor is different from the crystallization ratio of said microcrystalline semiconductor film of said second thin film transistor.

10. The semiconductor device according to claim 1, further comprising a diode having a semiconductor layer including a microcrystalline semiconductor film and an amorphous semiconductor film.

11. An active matrix substrate comprising the semiconductor device according to claim 1, wherein a drain electrode of said second thin film transistor is connected to a pixel electrode.

9. A semiconductor device, comprising:

a first thin film transistor; and

a second thin film transistor different from said first thin film transistor,

wherein said first thin film transistor has a gate electrode, a semiconductor layer including an amorphous semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer,

wherein said second thin film transistor has a gate electrode, a semiconductor layer including a microcrystalline semiconductor film and including no amorphous semiconductor film, and a gate insulating layer provided between said gate electrode and said semiconductor layer, and

wherein said semiconductor layer of said first thin film transistor is different from said semiconductor layer of said second thin film transistor in at least any one of a thickness, a layer structure, and the crystallization ratio.

12. A semiconductor device comprising:

a thin film transistor; and

a diode,

wherein said thin film transistor has a semiconductor layer including a microcrystalline semiconductor film, and

wherein said diode has a semiconductor layer including a microcrystalline semiconductor film and an amorphous semiconductor film.

13. The semiconductor device according to claim 12, wherein said semiconductor layer of said thin film transistor further comprises an amorphous semiconductor film.

14. The semiconductor device according to claim 13, wherein said amorphous semiconductor film of said diode is thicker than said amorphous semiconductor film of said thin film transistor.

15. An active matrix substrate comprising the semiconductor device according to claim 12, wherein said diode is provided in a display region.