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COMPOSITE WAFER SEMICONDUCTOR

  • US 20120049299A1
  • Filed: 08/27/2010
  • Published: 03/01/2012
  • Est. Priority Date: 08/27/2010
  • Status: Active Grant
First Claim
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1. A method of forming a composite wafer semiconductor, the method comprising:

  • providing a first wafer, the first wafer having a first side and a second side, the second side being substantially opposite the first side;

    providing a second wafer;

    forming an isolation set on the first side of the first wafer;

    etching the isolation set to create a free space in the isolation set;

    bonding the second wafer to the isolation set;

    forming a floating structure in the second wafer over the free space;

    forming a surface mount pad on the second side of the first wafer; and

    electrically coupling the floating structure to the surface mount pad using a through silicon via (TSV) conductor.

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