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LOW-LEAKAGE DIODES AND METHODS OF FORMING THE SAME

  • US 20120049934A1
  • Filed: 08/30/2010
  • Published: 03/01/2012
  • Est. Priority Date: 08/30/2010
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a bipolar transistor configured to operate as a diode, wherein the diode can be biased in a forward-biased mode of operation, a reverse-biased mode of operation, and an equilibrium mode of operation, the bipolar transistor comprising;

    an emitter for operating as a first terminal of the diode;

    a base for operating as a second terminal of the diode; and

    a collector for receiving a collector bias voltage, wherein the collector bias voltage is configured relative to a voltage of the emitter to minimize a diffusion leakage current of the diode when the diode is in the reverse-biased mode of operation.

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