MULTIPLE BITCELLS TRACKING SCHEME FOR SEMICONDUCTOR MEMORIES
First Claim
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1. A semiconductor memory, comprising:
- a first segment including;
a first memory bank comprising a first plurality of memory cells arranged in rows and columns and a first tracking cell disposed in a first tracking column,a second memory bank comprising a second plurality of memory cells arranged in rows and columns and a second tracking cell disposed in a second tracking column, anda first tracking circuit coupled to the first and second tracking cells and configured to output a first signal to memory control circuitry when the first and second tracking cells are accessed;
wherein the memory control circuitry is configured to set a memory clock based on the first signal.
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Abstract
A semiconductor memory segment includes a first memory bank having a first tracking cell disposed in a first tracking column. A second memory bank includes a second tracking cell disposed in a second tracking column. A first tracking circuit is coupled to the first and second tracking cells and is configured to output a first signal to memory control circuitry when the first and second tracking cells are accessed. The memory control circuitry is configured to set a clock based on the first signal.
17 Citations
20 Claims
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1. A semiconductor memory, comprising:
a first segment including; a first memory bank comprising a first plurality of memory cells arranged in rows and columns and a first tracking cell disposed in a first tracking column, a second memory bank comprising a second plurality of memory cells arranged in rows and columns and a second tracking cell disposed in a second tracking column, and a first tracking circuit coupled to the first and second tracking cells and configured to output a first signal to memory control circuitry when the first and second tracking cells are accessed; wherein the memory control circuitry is configured to set a memory clock based on the first signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method, comprising:
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starting a tracking clock when a tracking signal is transmitted from a memory control circuit of a semiconductor memory; using a first voltage from a first tracking cell disposed in a first column of a first segment of the semiconductor memory to control a first tracking read bit line in response to receiving the tracking signal; using a second voltage from a second tracking cell disposed in a second column of the first segment of the semiconductor memory to control a second tracking read bit line in response to receiving the tracking signal; outputting a first signal to a tracking global bit line from a first tracking circuit in response to receiving the first and second voltages from the first and second tracking read bit lines; and generating a first reset signal for triggering a reset of the tracking clock when the first signal is received from the tracking global bit line. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A semiconductor memory, comprising:
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a plurality of segments, each of the plurality of segments including; first and second banks of memory cells in which the memory cells are arranged in rows and columns, a local tracking circuit disposed between the first and second banks of memory cells, the local tracking circuit including a NOR gate having a first input coupled to a first tracking read bit line and a second input coupled to a second tracking read bit line, the first tracking read bit line coupled to a first tracking cell disposed in a first column of the first bank, the second tracking read bit line coupled to a second tracking cell disposed in a second column of the second bank, wherein the NOR gate has an output coupled to a global tracking bit line and is configured to trigger a reset of a tracking clock coupled to the global tracking bit line in response to receiving signals identifying that the first and second tracking cells have been accessed from the first and second tracking read bit lines. - View Dependent Claims (19, 20)
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Specification