MANUFACTURING METHODS OF SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DISPLAY DEVICE
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first conductive film over a substrate;
forming a first resist mask over the first conductive film;
forming a first gate electrode and a second gate electrode by selectively etching the first conductive film with the use of the first resist mask;
forming a first insulating film over the first gate electrode and the second gate electrode;
forming a semiconductor film over the first insulating film;
forming a second resist mask over the semiconductor film;
forming a first opening by selectively etching part of the semiconductor film and the first insulating film over the second gate electrode with the use of the second resist mask;
forming a second conductive film so as to cover the semiconductor film and the first opening;
forming a third resist mask over the second conductive film;
forming a first source electrode, a first drain electrode, a second source electrode and a second drain electrode by selectively etching the second conductive film with the use of the third resist mask,wherein a first transistor comprises the first gate electrode, the first source electrode and the first drain electrode,wherein a second transistor comprises the second gate electrode, the second source electrode and the second drain electrode,wherein one of the first source electrode and the first drain electrode is electrically connected to a source or drain wiring,wherein the other of the first source electrode and the first drain electrode is electrically connected to the second gate electrode, andwherein one of the second source electrode and the second drain electrode is electrically connected to a power source wiring;
forming a second insulating film over the first source electrode and the first drain electrode, the second source electrode and the second drain electrode, and the semiconductor film;
forming a fourth resist mask over the second insulating film;
forming a second opening by selectively etching the second insulating film and the semiconductor film with the use of the fourth resist mask and simultaneously forming a third opening in the second insulating film so as to expose part of the other of the second source electrode and the second drain electrode;
forming a third conductive film over the second insulating film so as to cover the third opening;
forming a fifth resist mask over the third conductive film; and
forming a pixel electrode by selectively etching the third conductive film with the use of the fifth resist mask.
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Accused Products
Abstract
An object is to simplify a manufacturing process of a transistor, and to manufacture a light-emitting display device not only with a smaller number of photomasks compared to the number of photomasks used in the conventional method but also without an additional step. By using an intrinsic or substantially intrinsic high-resistance oxide semiconductor for a semiconductor layer included in the transistor, so that a step of processing the semiconductor layer into an island shape in each transistor can be omitted. Unnecessary portions of the semiconductor layer are etched away at the same time as a step of forming an opening in an insulating layer formed in an upper layer of the semiconductor layer, so that the number of photolithography steps is reduced.
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Citations
27 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first conductive film over a substrate; forming a first resist mask over the first conductive film; forming a first gate electrode and a second gate electrode by selectively etching the first conductive film with the use of the first resist mask; forming a first insulating film over the first gate electrode and the second gate electrode; forming a semiconductor film over the first insulating film; forming a second resist mask over the semiconductor film; forming a first opening by selectively etching part of the semiconductor film and the first insulating film over the second gate electrode with the use of the second resist mask; forming a second conductive film so as to cover the semiconductor film and the first opening; forming a third resist mask over the second conductive film; forming a first source electrode, a first drain electrode, a second source electrode and a second drain electrode by selectively etching the second conductive film with the use of the third resist mask, wherein a first transistor comprises the first gate electrode, the first source electrode and the first drain electrode, wherein a second transistor comprises the second gate electrode, the second source electrode and the second drain electrode, wherein one of the first source electrode and the first drain electrode is electrically connected to a source or drain wiring, wherein the other of the first source electrode and the first drain electrode is electrically connected to the second gate electrode, and wherein one of the second source electrode and the second drain electrode is electrically connected to a power source wiring; forming a second insulating film over the first source electrode and the first drain electrode, the second source electrode and the second drain electrode, and the semiconductor film; forming a fourth resist mask over the second insulating film; forming a second opening by selectively etching the second insulating film and the semiconductor film with the use of the fourth resist mask and simultaneously forming a third opening in the second insulating film so as to expose part of the other of the second source electrode and the second drain electrode; forming a third conductive film over the second insulating film so as to cover the third opening; forming a fifth resist mask over the third conductive film; and forming a pixel electrode by selectively etching the third conductive film with the use of the fifth resist mask. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first conductive film over a substrate; forming a first resist mask over the first conductive film; forming a first gate electrode and a second gate electrode by selectively etching the first conductive film with the use of the first resist mask; forming a first insulating film over the first gate electrode and the second gate electrode; forming a semiconductor film over the first insulating film; forming a second resist mask over the semiconductor film; forming a first opening by selectively etching part of the semiconductor film and the first insulating film over the second gate electrode with the use of the second resist mask; forming a second conductive film so as to cover the semiconductor film and the first opening; forming a third resist mask over the second conductive film; forming a first source electrode, a first drain electrode, a second source electrode and a second drain electrode by selectively etching the second conductive film with the use of the third resist mask, wherein a first transistor comprises the first gate electrode, the first source electrode and the first drain electrode, wherein a second transistor comprises the second gate electrode, the second source electrode and the second drain electrode, wherein one of the first source electrode and the first drain electrode is electrically connected to a source or drain wiring, wherein the other of the first source electrode and the first drain electrode is electrically connected to the second gate electrode, wherein one of the second source electrode and the second drain electrode is electrically connected to a power source wiring, and wherein a capacitor comprises the second gate electrode and the power source wiring with the first insulating film and the semiconductor film therebetween; forming a second insulating film over the first source electrode and the first drain electrode, the second source electrode and the second drain electrode, and the semiconductor film; forming a fourth resist mask over the second insulating film; forming a second opening by selectively etching the second insulating film and the semiconductor film with the use of the fourth resist mask and simultaneously forming a third opening in the second insulating film so as to expose part of the other of the second source electrode and the second drain electrode; forming a third conductive film over the second insulating film so as to cover the third opening; forming a fifth resist mask over the third conductive film; and forming a pixel electrode by selectively etching the third conductive film with the use of the fifth resist mask. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first conductive film over a substrate; forming a first resist mask over the first conductive film; forming a first gate electrode and a second gate electrode by selectively etching the first conductive film with the use of the first resist mask; forming a first insulating film over the first gate electrode and the second gate electrode; forming a semiconductor film over the first insulating film; forming a second resist mask over the semiconductor film; forming a first opening by selectively etching part of the semiconductor film and the first insulating film over the second gate electrode with the use of the second resist mask; forming a second conductive film so as to cover the semiconductor film and the first opening; forming a third resist mask over the second conductive film; forming a first source electrode, a first drain electrode, a second source electrode and a second drain electrode by selectively etching the second conductive film with the use of the third resist mask, wherein a first transistor comprises the first gate electrode, the first source electrode and the first drain electrode, wherein a second transistor comprises the second gate electrode, the second source electrode and the second drain electrode, wherein one of the first source electrode and the first drain electrode is electrically connected to a source or drain wiring, wherein the other of the first source electrode and the first drain electrode is electrically connected to the second gate electrode, and wherein one of the second source electrode and the second drain electrode is electrically connected to a power source wiring; forming a second insulating film over the first source electrode and drain electrode, the second source electrode and drain electrode, and the semiconductor film; forming a third insulating film as a planarizing insulating film over the second insulating film; forming a fourth resist mask over the third insulating film; forming a second opening by selectively etching the third insulating film, the second insulating film, and the semiconductor film with the use of the fourth resist mask and simultaneously forming a third opening in the third insulating film and the second insulating film so as to expose part of the other of the second source electrode and the second drain electrode; forming a third conductive film over the third insulating film so as to cover the third opening; forming a fifth resist mask over the third conductive film; and farming a pixel electrode by selectively etching the third conductive film with the use of the fifth resist mask. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A method for manufacturing a light-emitting display device, comprising the steps of:
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forming a gate electrode over a substrate; forming a first insulating film over the gate electrode; forming a semiconductor film over the first insulating film; forming a source electrode and a drain electrode over the semiconductor film; forming a second insulating film over the source electrode and the drain electrode; and through a photolithography process, forming a contact hole in the second insulating film by removing a first part of the second insulating film, and forming a patterned semiconductor film by removing a second part of the second insulating film, a part of the semiconductor film and a part of the first insulating film; and forming a pixel electrode over the second insulating film so as to cover the contact hole, wherein the first part of the second insulating film overlaps with the drain electrode, and wherein the second part of the second insulating film, the part of the semiconductor film and the part of the first insulating film do not overlap with the source electrode and the drain electrode. - View Dependent Claims (23, 24, 25, 26, 27)
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Specification