STAGGERED THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME
First Claim
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1. ) A staggered thin film transistor, comprising:
- an annealed layer stack comprising;
an oxide containing layer;
a copper alloy layer deposited on the oxide containing layer;
a copper containing oxide layer; and
a copper containing layer.
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Abstract
A staggered thin film transistor and a method of forming the staggered thin film transistor are provided. The thin film transistor includes an annealed layer stack including an oxide containing layer, a copper alloy layer deposited on the conductive oxide layer, a copper containing oxide layer, and a copper containing layer.
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20 Claims
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1. ) A staggered thin film transistor, comprising:
an annealed layer stack comprising; an oxide containing layer; a copper alloy layer deposited on the oxide containing layer; a copper containing oxide layer; and a copper containing layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. ) A method of forming a staggered thin film transistor, comprising:
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providing an oxide containing layer of the thin film transistor; depositing a copper alloy layer on the oxide containing layer; depositing a copper containing oxide layer on the copper alloy layer; depositing a copper containing layer on the copper containing oxide layer; and annealing the oxide containing layer, the copper alloy layer, the copper containing oxide layer and the copper containing layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification