METHOD AND SYSTEM FOR HETEROGENEOUS SUBSTRATE BONDING OF WAVEGUIDE RECEIVERS

• US 20120057816A1
• Filed: 03/03/2011
• Published: 03/08/2012
• Est. Priority Date: 10/13/2009
• Status: Active Grant

• Current Assignee: Skorpios Technologies Inc.
• Original Assignee: Skorpios Technologies Inc.
• Inventors: Krasulick, Stephen B., Dallesasse, John
• Granted Patent: US 8,611,388 B2
• Time in Patent Office: Days
• US Class Current: 385/14
• CPC Class Codes: G02B 6/12 of the integrated circuit kind electric integrated circuits H01L27/00
• CPC Class Codes: G02B 6/4232 using the surface tension of fluid solder to align the elements, e.g. solder bump techniques flip-chip mounting techniques in assembly of semiconductor devices H01L24/81
• CPC Class Codes: G02B 6/4245 Mounting of the opto-electronic elements
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 2224/73259 Bump and HDI connectors
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0237 by soldering

Abstract

A composite integrated optical device includes a substrate including a silicon layer and a waveguide disposed in the silicon layer. The composite integrated optical device also includes an optical detector bonded to the silicon layer and a bonding region disposed between the silicon layer and the optical detector. The bonding region includes a metal-assisted bond at a first portion of the bonding region. The metal-assisted bond includes an interface layer positioned between the silicon layer and the optical detector. The bonding region also includes a direct semiconductor-semiconductor bond at a second portion of the bonding region.

Claims

1. A composite integrated optical device comprising:

a substrate comprising a silicon layer;

a waveguide disposed in the silicon layer;

an optical detector bonded to the silicon layer; and

a bonding region disposed between the silicon layer and the optical detector, wherein the bonding region comprises;

a metal-assisted bond at a first portion of the bonding region, wherein the metal-assisted bond includes an interface layer positioned between the silicon layer and the optical detector; and

a direct semiconductor-semiconductor bond at a second portion of the bonding region.

2. The composite integrated optical device of claim 1 wherein the metal-assisted bond provides an ohmic contact between the optical detector and the silicon layer.

3. The composite integrated optical device of claim 1 wherein the metal-assisted bond provides a Schottky contact between the optical detector and the silicon layer.

4. The composite integrated optical device of claim 1 wherein the substrate comprises a silicon on insulator wafer including a silicon substrate, an oxide layer disposed on the silicon substrate, and the silicon layer disposed on the oxide layer.

5. The composite integrated optical device of claim 1 wherein the optical detector comprises a III-V optical device.

6. The composite integrated optical device of claim 1 wherein the III-V optical device comprises an APD receiver.

7. The composite integrated optical device of claim 1 wherein the III-V optical device comprises a PIN receiver.

8. The composite integrated optical device of claim 1 wherein the interface layer comprises In_xPd_y.

9. The composite integrated optical device of claim 8 wherein x=0.7 and y=0.3.

10. The composite integrated optical device of claim 1 wherein a thickness of the interface layer is less than 100 Å

.

11. The composite integrated optical device of claim 10 wherein the thickness is less than 50 Å

.

12. The composite integrated optical device of claim 1 wherein the waveguide supports a fundamental mode and a first portion of the waveguide associated with a maximum intensity of the fundamental mode includes a direct semiconductor-semiconductor bond and a second portion of the waveguide associated with a wing of the fundamental mode includes a metal-assisted bond.

13. The composite integrated optical device of claim 1 wherein the waveguide supports a higher order mode and a node of the higher order mode is positioned at a metal-assisted bond.

14. A method of fabricating a composite integrated optical device, the method comprising:

providing a substrate comprising a silicon layer;

forming a waveguide in the silicon layer;

forming a layer comprising a metal material coupled to the silicon layer;

providing an optical detector;

forming a metal-assisted bond between the metal material and a first portion of the optical detector;

forming a direct semiconductor-semiconductor bond between the waveguide and a second portion of the optical detector.

15. The method of claim 14 wherein the substrate comprises a silicon on insulator wafer including a silicon substrate, an oxide layer disposed on the silicon substrate, and the silicon layer disposed on the oxide layer.

16. The method of claim 14 wherein the optical detector comprises an APD receiver.

17. The method of claim 16 wherein forming the layer comprising the metal material comprises:

depositing the metal material; and

patterning the metal material to expose the silicon layer in a predetermined spatial pattern.

18. The method of claim 14 wherein the metal material comprises In_xPd_y.

19. The method of claim 18 wherein x=0.7 and y=0.3.

20. The method of claim 14 wherein a thickness of the metal material is less than 100 Å

.

21. The method of claim 14 wherein forming the metal-assisted bond and forming the direct semiconductor-semiconductor bond comprises performing a bonding process at a temperature ranging from about 350°

C. to about 500°

C.

22. The method of claim 21 wherein the temperature ranges from about 400°

C. to about 450°

C.