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THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME

  • US 20120058601A1
  • Filed: 11/10/2011
  • Published: 03/08/2012
  • Est. Priority Date: 11/19/2008
  • Status: Active Grant
First Claim
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1. A method for manufacturing a thin film transistor,the thin film transistor including:

  • a substrate;

    a gate electrode provided on the substrate;

    a gate insulating film provided on the gate electrode;

    a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide;

    a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and

    a channel protecting layer including a first portion provided between the source electrode and the semiconductor layer, and a second portion provided between the drain electrode and the semiconductor layer,the method comprising;

    forming the gate electrode on the substrate;

    forming the gate insulating film on the gate electrode;

    forming the semiconductor layer on the gate insulating film;

    forming the channel protecting layer covering at least a part of a side face of the semiconductor layer above the gate electrode;

    performing a heat treatment on the semiconductor layer and the channel protecting layer at a temperature not less than 160°

    C.; and

    forming the source electrode and the drain electrode on the semiconductor layer and the channel protecting layer after the performing the heat treatment.

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