THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a thin film transistor,the thin film transistor including:
- a substrate;
a gate electrode provided on the substrate;
a gate insulating film provided on the gate electrode;
a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide;
a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and
a channel protecting layer including a first portion provided between the source electrode and the semiconductor layer, and a second portion provided between the drain electrode and the semiconductor layer,the method comprising;
forming the gate electrode on the substrate;
forming the gate insulating film on the gate electrode;
forming the semiconductor layer on the gate insulating film;
forming the channel protecting layer covering at least a part of a side face of the semiconductor layer above the gate electrode;
performing a heat treatment on the semiconductor layer and the channel protecting layer at a temperature not less than 160°
C.; and
forming the source electrode and the drain electrode on the semiconductor layer and the channel protecting layer after the performing the heat treatment.
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Accused Products
Abstract
A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; source and drain electrodes provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source and drain electrodes above the gate electrode.
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Citations
18 Claims
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1. A method for manufacturing a thin film transistor,
the thin film transistor including: - a substrate;
a gate electrode provided on the substrate;
a gate insulating film provided on the gate electrode;
a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide;
a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and
a channel protecting layer including a first portion provided between the source electrode and the semiconductor layer, and a second portion provided between the drain electrode and the semiconductor layer,the method comprising; forming the gate electrode on the substrate; forming the gate insulating film on the gate electrode; forming the semiconductor layer on the gate insulating film; forming the channel protecting layer covering at least a part of a side face of the semiconductor layer above the gate electrode; performing a heat treatment on the semiconductor layer and the channel protecting layer at a temperature not less than 160°
C.; andforming the source electrode and the drain electrode on the semiconductor layer and the channel protecting layer after the performing the heat treatment. - View Dependent Claims (2, 3, 4, 5, 6)
- a substrate;
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7. A method for manufacturing a display device,
the display device including: - a thin film transistor including;
a substrate;
a gate electrode provided on the substrate;
a gate insulating film provided on the gate electrode;
a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide;
a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and
a channel protecting layer including a first portion provided between the source electrode and the semiconductor layer, and a second portion provided between the drain electrode and the semiconductor layer;
a pixel electrode connected to one of the source electrode and the drain electrode; and
an optical element producing at least one of a change in optical characteristics and light emission by an electric signal provided to the pixel electrode,the method comprising; forming the gate electrode on the substrate; forming the gate insulating film on the gate electrode; forming a layer of the oxide on the gate insulating film; forming the channel protecting layer covering at least a part of a side face of the layer of the oxide above the gate electrode and exposing the layer of the oxide in a third region, the pixel electrode being formed in the third region; performing a heat treatment on the layer of the oxide and the channel protecting layer at a temperature not less than 160°
C. to decrease an electric resistance of the layer of the oxide not covered with the channel protecting layer to form the pixel electrode; andforming the source electrode and the drain electrode on the semiconductor layer and the channel protecting layer after the performing the heat treatment. - View Dependent Claims (8, 9, 10, 11, 12)
- a thin film transistor including;
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13. A method for manufacturing a display device,
the display device including: - a thin film transistor including;
a substrate;
a gate electrode provided on the substrate;
a gate insulating film provided on the gate electrode;
a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide;
a source electrode and a drain electrode provided on the semiconductor layer, the source electrode being opposed to one end of the gate electrode, the drain electrode being opposed to another end of the gate electrode, the another end being opposite to the one end, the drain electrode being apart from the source electrode; and
a channel protecting layer including a first portion provided between the source electrode and the semiconductor layer, and a second portion provided between the drain electrode and the semiconductor layer;
a pixel electrode connected to one of the source electrode and the drain electrode; and
an optical element producing at least one of a change in optical characteristics and light emission by an electric signal provided to the pixel electrode,the method comprising; forming the gate electrode on the substrate; forming the gate insulating film on the gate electrode; performing surface processing selectively changing smoothness of a surface of the gate insulating film; and forming a layer of the oxide on the gate insulating film. - View Dependent Claims (14, 15, 16, 17, 18)
- a thin film transistor including;
Specification