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Nonvolatile semiconductor storage device with charge storage layer and its manufacturing method

  • US 20120058618A1
  • Filed: 10/11/2011
  • Published: 03/08/2012
  • Est. Priority Date: 03/05/2008
  • Status: Active Grant
First Claim
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1. A method of manufacturing a nonvolatile semiconductor storage device, said method comprising:

  • sequentially forming a charge storage film, a conductive film, and a mask film on a semiconductor substrate;

    sequentially removing the mask film, the conductive film, and the charge storage film at a given portion to form a groove;

    forming a word gate electrode to fill in the groove whose inside is covered with an insulating film;

    after said forming the word gate electrode, removing the mask film;

    after said removing the mask film, forming a spacer film to cover the conductive film and the word gate electrode;

    etching back the spacer film to form a spacer layer on both sides of the word gate electrode through the insulating film;

    removing the conductive film and the charge storage film to form a control gate electrode; and

    forming a source drain diffusion layer.

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