SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
First Claim
1. A semiconductor device comprising:
- a first gate electrode and a second gate electrode formed apart from each other over an insulating surface;
an oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode;
one of a source electrode and a drain electrode overlapping with a part of the first gate electrode and a part of the oxide semiconductor film;
the other of the source electrode and the drain electrode overlapping with a part of the second gate electrode and a part of the oxide semiconductor film; and
an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode, the insulating film being in direct contact with the oxide semiconductor film.
1 Assignment
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Accused Products
Abstract
A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a first gate electrode and a second gate electrode formed apart from each other over an insulating surface; an oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode; one of a source electrode and a drain electrode overlapping with a part of the first gate electrode and a part of the oxide semiconductor film; the other of the source electrode and the drain electrode overlapping with a part of the second gate electrode and a part of the oxide semiconductor film; and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode, the insulating film being in direct contact with the oxide semiconductor film. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
a first transistor over an insulating surface comprising; a first gate electrode and a second gate electrode formed apart from each other over the insulating surface; a first oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode; one of a first source electrode and a first drain electrode overlapping with a part of the first gate electrode and a part of the first oxide semiconductor film; the other of the first source electrode and the first drain electrode overlapping with a part of the second gate electrode and a part of the first oxide semiconductor film; and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the first oxide semiconductor film, the first source electrode, and the first drain electrode, the insulating film being in direct contact with the first oxide semiconductor film, and a second transistor over the insulating surface comprising; a third gate electrode over the insulating surface; a second oxide semiconductor film overlapping with the third gate electrode with the gate insulating film interposed therebetween; a second source electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film and a second drain electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film; and the insulating film covering the gate insulating film, the third gate electrode, the second oxide semiconductor film, the second source electrode, and the second drain electrode, the insulating film being in direct contact with the second oxide semiconductor film. - View Dependent Claims (5, 6)
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7. A display device comprising:
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a driver circuit for driving a pixel portion over an insulating surface, and the pixel portion comprising a plurality of pixels over the insulating surface, each of the plurality of pixels comprising; a light-emitting element; a switching element for controlling on/off of a current control element; and the current control element for controlling a current of the light-emitting element, the current control element comprising; a first gate electrode and a second gate electrode formed apart from each other over the insulating surface; an oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode; one of a source electrode and a drain electrode overlapping with a part of the first gate electrode and a part of the oxide semiconductor film; the other of the source electrode and the drain electrode overlapping with a part of the second gate electrode and a part of the oxide semiconductor film; and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the oxide semiconductor film, the source electrode, and the drain electrode, the insulating film being in direct contact with the oxide semiconductor film. - View Dependent Claims (8, 9, 10)
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11. A display device comprising:
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a pixel portion comprising a plurality of pixels over an insulating surface, each of the plurality of pixels comprising a first transistor, the first transistor comprising; a first gate electrode and a second gate electrode formed apart from each other over the insulating surface; a first oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode; one of a first source electrode and a first drain electrode overlapping with a part of the first gate electrode and a part of the first oxide semiconductor film; the other of the first source electrode and the first drain electrode overlapping with a part of the second gate electrode and a part of the first oxide semiconductor film; and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the first oxide semiconductor film, the first source electrode, and the first drain electrode, the insulating film being in direct contact with the first oxide semiconductor film, and a driver circuit for driving the pixel portion over the insulating surface, the driver circuit comprising a second transistor, the second transistor comprising; a third gate electrode over the insulating surface; a second oxide semiconductor film overlapping with the third gate electrode with the gate insulating film interposed therebetween; a second source electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film and a second drain electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film; and the insulating film covering the gate insulating film, the third gate electrode, the second oxide semiconductor film, the second source electrode, and the second drain electrode, the insulating film being in direct contact with the second oxide semiconductor film. - View Dependent Claims (12, 13, 14)
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15. A display device comprising:
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a pixel portion comprising a plurality of pixels over an insulating surface, each of the plurality of pixels comprising; a light-emitting element; a switching element for controlling on/off of a current control element; and the current control element for controlling a current of the light-emitting element, the current control element comprising; a first gate electrode and a second gate electrode formed apart from each other over the insulating surface; a first oxide semiconductor film comprising a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode; one of a first source electrode and a first drain electrode overlapping with a part of the first gate electrode and a part of the first oxide semiconductor film; the other of the first source electrode and the first drain electrode overlapping with a part of the second gate electrode and a part of the first oxide semiconductor film; and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, the first oxide semiconductor film, the first source electrode, and the first drain electrode, the insulating film being in direct contact with the first oxide semiconductor film, and a driver circuit for driving the pixel portion over the insulating surface, the driver circuit comprising a transistor comprising; a third gate electrode over the insulating surface; a second oxide semiconductor film overlapping with the third gate electrode with the gate insulating film interposed therebetween; a second source electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film and a second drain electrode overlapping with a part of the third gate electrode and a part of the second oxide semiconductor film; and the insulating film covering the gate insulating film, the third gate electrode, the second oxide semiconductor film, the second source electrode, and the second drain electrode, the insulating film being in direct contact with the second oxide semiconductor film. - View Dependent Claims (16, 17, 18)
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Specification