METHOD AND SYSTEM FOR PROVIDING A RELIABLE LIGHT EMITTING DIODE SEMICONDUCTOR DEVICE

• US 20120061700A1
• Filed: 09/09/2010
• Published: 03/15/2012
• Est. Priority Date: 09/09/2010
• Status: Abandoned Application

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: EWE, Henrik, MAHLER, Joachim, EDER, Andreas, LANDAU, Stefan
• Application Number:
  US12/878,043
• Publication Number:
  US 20120061700A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method and a system for a reliable LED semiconductor device are provided. In one embodiment, the device comprises a carrier, a light emitting diode disposed on the carrier, an encapsulating material disposed over the light emitting diode and the carrier, at least one through connection formed in the encapsulating material, and a metallization layer disposed and structured over the at least one through connection.

Claims

1. A semiconductor device comprising:

a carrier;

a light emitting diode disposed on the carrier;

an encapsulating material disposed over the light emitting diode;

at least one through connection formed in the encapsulating material; and

a metallization layer disposed and structured over the at least one through connection.

2. The device of claim 1, further comprising:

a metal layer disposed over the encapsulating material.

3. The device of claim 1, wherein the encapsulating material is a polymer material.

4. The device of claim 3, wherein the polymer material is acrylic resin, ormocers, silicon epoxy copolymer or epoxy-acrylate copolymer.

5. The device of claim 3, wherein the polymer material is epoxy resin.

6. The device of claim 1, wherein the encapsulating material is a low light absorbing material absorbing light in a full wavelength range.

7. The device of claim 6, wherein the encapsulating material is a low light absorbing material absorbing light in a short wavelength range of a full wavelength range.

8. The device of claim 1, wherein the encapsulating material is highly transparent, and has a low coefficient of thermal expansion.

9. The device of claim 1, wherein the at least one through connection is at least one via opening to at least one contact of the light emitting diode.

10. The device of claim 1, further comprising:

an organic protective layer disposed over the light emitting diode.

11. The device of claim 9, further comprising:

an optical conversion layer disposed between the at least one contact and an organic sacrificial layer of the light emitting diode.

12. A semiconductor device comprising:

a carrier;

a light emitting diode and at least one semiconductor chip disposed on the carrier;

a first type of encapsulating material disposed over the light emitting diode;

a second type of encapsulating material disposed over at least one of the at least one semiconductor chip and the carrier;

at least one through connection formed in the encapsulating material; and

a metallization layer disposed and structured over the at least one through connection.

13. The device of claim 12, wherein the first type of encapsulating material is a polymer material.

14. The device of claim 12, wherein the first type of encapsulating material and the second type of encapsulating material is a same material.

15. The device of claim 12, wherein the second type of encapsulating material is an epoxy.

16. The device of claim 12, wherein the first type of encapsulating material is a low light absorbing material absorbing light in a full wavelength range.

17. The device of claim 16, wherein the first type of encapsulating material is a low light absorbing material absorbing light in a short wavelength range of the full wavelength range.

18. The device of claim 12, wherein the first type of encapsulating material is highly transparent and has a low coefficient of thermal expansion.

19. The device of claim 12, wherein the at least one semiconductor chip comprises a power semiconductor chip and an integrated circuit.

20. The device of claim 12, wherein the at least one through connection is at least one via opening to at least one contact of the light emitting diode and at least one of the at least one semiconductor chip.

21. A method for forming a semiconductor device comprising:

providing a carrier;

disposing at least one light emitting diode on the carrier;

encapsulating the at least one light emitting diode with an encapsulating material;

forming at least one through connection in the encapsulating material; and

forming a metallization layer over the at least one through connection.

22. The method of claim 21, wherein encapsulating the at least one light emitting diode and the carrier with an encapsulating material comprises:

encapsulating the at least one light emitting diode and the carrier with an encapsulating material having a low coefficient of thermal expansion.

23. The method of claim 21, wherein encapsulating the at least one light emitting diode with an encapsulating material comprises:

encapsulating the at least one light emitting diode with a low light absorbing material absorbing light in a full wavelength range.

24. The method of claim 23, wherein encapsulating the at least one light emitting diode with an encapsulating material comprises:

encapsulating the at least one light emitting diode with a low light absorbing material absorbing light in a short wavelength range of the full wavelength range.

25. The method of claim 21, wherein encapsulating the at least one light emitting diode with an encapsulating material comprises:

encapsulating the at least one light emitting diode with an encapsulating material that is highly transparent.

26. The method of claim 21, further comprising:

forming a metal layer over the encapsulating material.

27. The method of claim 26, wherein forming at least one through connection in the encapsulating material comprises:

forming at least one via opening in the encapsulating material and the metal layer.

28. The method of claim 21, wherein forming a metallization layer over the at least one through connection comprises:

filling the at least one through connection with a metal; and

removing portions of the metal to expose the encapsulating material.

29. The method of claim 21, further comprising:

encapsulating at least one semiconductor chip and the carrier with the encapsulating material

30. The method of claim 21, further comprising:

encapsulating at least one semiconductor chip and the carrier with an encapsulating material different from the encapsulating material for encapsulating the at least one light emitting diode.