SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a drain layer of a first conductivity type;
a drift layer of the first conductivity type provided on the drain layer;
a base region of a second conductivity type provided on the drift layer;
a source region of the first conductivity type selectively provided on a surface of the base region;
a first gate electrode provided in each of a plurality of first trenches via a first insulating film, the first trenches penetrating from a surface of the source region through the base region and contacting the drift layer;
a field-plate electrode provided in the first trench under the first gate electrode via a second insulating film;
a second gate electrode provided in a second trench via a third insulating film, the second trench penetrating from the surface of the source region through the base region and contacting the drift layer between the first trenches;
a drain electrode connected to the drain layer; and
a source electrode connected to the source region and the base region.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes: a drain layer; a drift layer provided on the drain layer; a base region provided on the drift layer; a source region selectively provided on a surface of the base region; a first gate; a field-plate; a second gate; a drain electrode; and a source electrode. The first gate electrode is provided in each of a plurality of first trenches via a first insulating film. The first trenches penetrate from a surface of the source region through the base region and contact the drift layer. The field-plate electrode is provided in the first trench under the first gate electrode via a second insulating film. The second gate electrode is provided in a second trench via a third insulating film. The second trench penetrates from the surface of the source region through the base region and contacts the drift layer between the first trenches.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a drain layer of a first conductivity type; a drift layer of the first conductivity type provided on the drain layer; a base region of a second conductivity type provided on the drift layer; a source region of the first conductivity type selectively provided on a surface of the base region; a first gate electrode provided in each of a plurality of first trenches via a first insulating film, the first trenches penetrating from a surface of the source region through the base region and contacting the drift layer; a field-plate electrode provided in the first trench under the first gate electrode via a second insulating film; a second gate electrode provided in a second trench via a third insulating film, the second trench penetrating from the surface of the source region through the base region and contacting the drift layer between the first trenches; a drain electrode connected to the drain layer; and a source electrode connected to the source region and the base region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a drain layer of a first conductivity type; a drift layer of the first conductivity type provided on the drain layer; a drift region of a second conductivity type provided on the drift layer; a source region of the first conductivity type provided on a surface of the base region; a contact region provided in each of a plurality of first trenches, the first trenches penetrating from a surface of the source region through the base region and contacting the drift layer; a field-plate electrode provided in the first trench under the contact region via a first insulating film; a gate electrode provided in a second trench via the first insulating film, the second trench penetrating from the surface of the source region through the base region and contacting the drift layer between the first trenches; a drain electrode connected to the drain layer; and a source electrode connected to the source region and the contact region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification