RF LAYERED MODULE USING THREE DIMENSIONAL VERTICAL WIRING AND DISPOSING METHOD THEREOF

• US 20120063106A1
• Filed: 08/25/2011
• Published: 03/15/2012
• Est. Priority Date: 09/15/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Young Il, Song, In Sang, Kim, Duck Hwan, Kim, Chul Soo, Park, Yun Kwon, Shin, Jea Shik, Kim, Hyung Rak, Lee, Jae Chun
• Granted Patent: US 8,824,163 B2
• Time in Patent Office: Days
• US Class Current: 361/772
• CPC Class Codes: H01L 2223/6616 Vertical connections, e.g. vias
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2225/0652 Bump or bump-like direct electrical connections from substrate to substrate
• CPC Class Codes: H01L 2225/06548 Conductive via connections through the substrate, container, or encapsulation
• CPC Class Codes: H01L 2225/06572 Auxiliary carrier between devices, the carrier having an electrical connection structure
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/5385 Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 25/0652 the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: Y10T 29/49165 by forming conductive walled aperture in base

Abstract

Provided is a structure and disposing method of a radio frequency (RF) layered module using three dimensional (3D) vertical wiring. A first wafer in the RF layered module having the 3D vertical wiring may include a first RF device and at least one first via- hole. A second wafer may include a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole. A vertical wiring may connect the at least one first via-hole and the at least one second via-hole. The vertical wiring may be configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.

Claims

1. A radio frequency (RF) layered module using three dimensional (3D) vertical wiring, comprising:

a first wafer provided with a first RF device and at least one first via-hole;

a second wafer provided with a second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole;

a vertical wiring connecting the at least one first via-hole and the at least one second via-hole; and

a penetrating electrode configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.

2. The RF layered module of claim 1, further comprising:

a first electrode connecting the at least one first via-hole and the first RF device.

3. The RF layered module of claim 1, wherein:

a top surface of the first wafer has a flat structure, and

the first RF device is disposed on the top surface of the first wafer.

4. The RF layered module of claim 1, wherein:

a top surface of the first wafer has a cavity formed in a predetermined portion, and

the first RF device is disposed in the cavity.

5. The RF layered module of claim 1, wherein:

a top surface and a bottom surface of the first wafer each have a cavity formed in a predetermined portion, and

the first RF device is disposed in the cavity formed on the top surface.

6. The RF layered module of claim 1, wherein:

a top surface and a bottom surface of the first wafer each have a cavity formed in a predetermined portion,

the first RF device is disposed in the cavity formed on the top surface, and

a third RF device is disposed in the cavity formed on the bottom surface.

7. The RF layered module of claim 1, wherein the first wafer is provided with a plurality of RF devices performing different RF functions, and forming multiple arrays on the first wafer.

8. The RF layered module of claim 1, wherein the first wafer and the second wafer are coupled using a eutectic bonding, a ball grid array bonding, a fusion bonding, a polymer bonding, or any combination thereof.

9. The RF layered module of claim 2, further comprising:

a ball grid connecting the first RF device and the first electrode,

wherein the first electrode is disposed on a top side of the first wafer.

10. The RF layered module of claim 2, further comprising:

a wire connecting the first RF device and the first electrode,

wherein the first electrode is disposed on a top side of the first wafer.

11. A multi-array radio frequency (RF) layered module using three dimensional (3D) vertical wiring, comprising:

a first RF layered module configured to perform a function of a first RF device and a second RF device;

a second RF layered module configured to perform a function of a third RF device and a fourth RF device; and

a multi-array substrate connected to a bottom side of the first RF layered module and the second RF layered module, and including an inductor or a capacitor,

wherein the first RF layered module comprises;

a first wafer provided with the first RF device and at least one first via-hole,

a second wafer provided with the second RF device and at least one second via-hole disposed at a location corresponding to the at least one first via-hole,

a vertical wiring connecting the at least one first via-hole and the at least one second via-hole, and

a penetrating electrode configured to be connected to a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole; and

the second RF layered module comprises;

a third wafer provided with the third RF device and at least one third via-hole,

a fourth wafer provided with the fourth RF device and at least one fourth via-hole disposed at a location corresponding to the at least one third via-hole,

a vertical wiring connecting the at least one third via-hole and the at least one fourth via-hole, and

a penetrating electrode configured to be connected to a bottom surface of the at least one third via-hole or a top surface of the at least one fourth via-hole.

12. The multi-array RF layered module of claim 11, wherein the first wafer is provided with a plurality of RF devices performing different RF functions, and forming multiple arrays on the first wafer.

13. A multi-array radio frequency (RF) layered module using three dimensional (3D) vertical wiring, comprising:

a plurality of RF layered modules having the 3D vertical wiring;

a multi-array substrate including the plurality of RF layered modules;

a first connecting portion connecting the plurality of RF layered modules and the multi-array substrate; and

a second connecting portion connecting the multi-array substrate and a circuit substrate including an inductor or a capacitor.

14. A radio frequency (RF) layered module disposing method using three dimensional (3D) vertical wiring, the method comprising:

layering a first RF device on a top side of a first wafer, the first wafer including at least one first via-hole;

layering a second wafer including at least one second via-hole formed at a location corresponding to the at least one first via-hole on the top side of the first wafer, and layering a second RF device on a top side of the second wafer;

connecting the at least one first via-hole and the at least one second via-hole; and

forming a penetrating electrode to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole.

15. The method of claim 14, wherein:

the layering of the first RF device comprises layering the first RF device on a flat top surface of the first wafer, and

the layering of the second RF device comprises layering the second RF device on a flat top surface of the second wafer.

16. The method of claim 14, further comprising:

forming a first cavity by etching a top surface of the first wafer; and

forming a second cavity by etching a top surface of the second wafer, wherein

the layering of the first RF device comprises layering the first RF device in the first cavity, and

the layering of the second RF device comprises layering the second RF device in the second cavity.

17. A multi-array radio frequency (RF) layered module disposing method using a three dimensional (3D) vertical wiring, comprising:

layering a first RF layered module and a second RF layered module on a top side of a multi-array substrate including an inductor or a capacitor to form multiple arrays;

wherein the first RF layered module is configured to perform a function of a first RF device and a second RF device and is formed by;

layering a first wafer on the top side of the multi-array substrate,

layering a first RF device on a top side of the first wafer, and forming at least one first via-hole proximate to the first RF device,

layering a second wafer on the top side of the first wafer, layering a second RF device on a top side of the second wafer, and forming at least one second via-hole at a location corresponding to the at least one first via-hole,

connecting the at least one first via-hole and the at least one second via-hole, and

forming a penetrating electrode configured to be connected to an external device through a bottom surface of the at least one first via-hole or a top surface of the at least one second via-hole; and

the second RF layered module is configured to a function of a third RF device and a fourth RF device and is formed by;

layering a third wafer on the top side of the multi-array substrate,

layering a third RF device on a top side of the third wafer, and forming at least one third via-hole proximate to the third RF device,

layering a fourth wafer on the top side of the third wafer, layering a fourth RF device on a top side of the fourth wafer, and forming at least one fourth via-hole at a location corresponding to the at least one third via-hole,

connecting the at least one third via-hole and the at least one fourth via-hole, and

forming a penetrating electrode configured to be connected to an external device through a bottom surface of the at least one third via-hole or a top surface of the at least one fourth via-hole.

18. A radio frequency (RF) layered module, comprising:

a first wafer provided with at least one first RF device and at least one first via-hole;

a second wafer provided with at least one second RF device and at least one second via-hole corresponding to the at least one first via-hole; and

vertical wiring connecting the at least one first via-hole and at least one second via-hole.

19. The RF layered module of claim 18, wherein the at least one first RF device is connected to the at least one first via-hole, and the at least one second RF device is connected to the at least one second via-hole.

20. The RF layered module of claim 18, wherein first wafer is provided with at least two first RF devices, including at least one of the at least two first RF devices on a first surface of the first wafer, and at least one of the at least two first RF devices on a second surface of the first wafer.