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Reconfigurable Multi-level Sensing Scheme for Semiconductor Memories

  • US 20120063195A1
  • Filed: 09/12/2011
  • Published: 03/15/2012
  • Est. Priority Date: 09/13/2010
  • Status: Active Grant
First Claim
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1. A method for sensing at least one parameter indicative of a logical state of a multi-level memory cell, the method comprising the steps of:

  • measuring the at least one parameter of the multi-level memory cell;

    comparing the measured at least one parameter of the multi-level memory cell with a prescribed reference signal, the reference signal having a value which varies as a function of time; and

    storing a time value corresponding to a point in time at which the reference signal is substantially equal to the measured at least one parameter of the multi-level memory cell, the stored time value being indicative of a sensed logical state of the multi-level memory cell.

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