METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide insulating film over a substrate;
forming a seed crystal with a hexagonal crystal structure including zinc by a sputtering method over the oxide insulating film;
causing a crystal growth using the seed crystal as a nucleus to form a crystalline oxide semiconductor film having a hexagonal crystal structure;
performing a heat treatment on the crystalline oxide semiconductor film;
etching the crystalline oxide semiconductor film after the heat treatment;
forming a pair of electrodes over the crystalline oxide semiconductor film after the etching step;
forming a gate insulating film over the crystalline oxide semiconductor film and the pair of electrodes; and
forming a gate electrode over the gate insulating film.
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Abstract
An object is to manufacture a semiconductor device including an oxide semiconductor film, which has stable electric characteristics and high reliability. A crystalline oxide semiconductor film is formed, without performing a plurality of steps, as follows: by utilizing a difference in atomic weight of plural kinds of atoms included in an oxide semiconductor target, zinc with low atomic weight is preferentially deposited on an oxide insulating film to form a seed crystal including zinc; and tin, indium, or the like with high atomic weight is deposited on the seed crystal while causing crystal growth. Further, a crystalline oxide semiconductor film is formed by causing crystal growth using a seed crystal with a hexagonal crystal structure including zinc as a nucleus, whereby a single crystal oxide semiconductor film or a substantially single crystal oxide semiconductor film is formed.
122 Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide insulating film over a substrate; forming a seed crystal with a hexagonal crystal structure including zinc by a sputtering method over the oxide insulating film; causing a crystal growth using the seed crystal as a nucleus to form a crystalline oxide semiconductor film having a hexagonal crystal structure; performing a heat treatment on the crystalline oxide semiconductor film; etching the crystalline oxide semiconductor film after the heat treatment; forming a pair of electrodes over the crystalline oxide semiconductor film after the etching step; forming a gate insulating film over the crystalline oxide semiconductor film and the pair of electrodes; and forming a gate electrode over the gate insulating film. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide insulating film over a substrate; forming a pair of electrodes over the oxide insulating film; forming a seed crystal with a hexagonal crystal structure including zinc by a sputtering method over the oxide insulating film and the pair of electrodes; causing a crystal growth using the seed crystal as a nucleus to form a crystalline oxide semiconductor film having a hexagonal crystal structure; performing a heat treatment on the crystalline oxide semiconductor film; etching the crystalline oxide semiconductor film after the heat treatment; forming a gate insulating film over the crystalline oxide semiconductor film after the etching step; and forming a gate electrode over the gate insulating film. - View Dependent Claims (7, 9, 10)
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11. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film comprising an oxide insulating film over the gate electrode; forming a seed crystal with a hexagonal crystal structure including zinc by a sputtering method over the gate insulating film; causing a crystal growth using the seed crystal as a nucleus to form a crystalline oxide semiconductor film having a hexagonal crystal structure; performing a heat treatment on the crystalline oxide semiconductor film; etching the crystalline oxide semiconductor film after the heat treatment; and forming a pair of electrodes over the crystalline oxide semiconductor film after the etching step. - View Dependent Claims (12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating film comprising an oxide insulating film over the gate electrode; forming a pair of electrodes over the gate insulating film; forming a seed crystal with a hexagonal crystal structure including zinc by a sputtering method over the gate insulating film and the pair of electrodes; causing a crystal growth using the seed crystal as a nucleus to form a crystalline oxide semiconductor film having a hexagonal crystal structure; and performing a heat treatment on the crystalline oxide semiconductor film. - View Dependent Claims (8, 17, 18, 19, 20)
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Specification