OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20120068214A1
• Filed: 09/19/2011
• Published: 03/22/2012
• Est. Priority Date: 09/21/2010
• Status: Abandoned Application

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Kuo, De-Shan, Ko, Ting-Chia, Ko, Tsun-Kai
• Application Number:
  US13/235,797
• Publication Number:
  US 20120068214A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0265 Pendeoepitaxy
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

An optoelectronic device is provided that includes a substrate having a surface and a normal direction perpendicular to the surface, a first semiconductor layer formed on the surface, and at least one hollow component formed between the first semiconductor layer and the surface. A method of fabricating an optoelectronic device is also provided that includes providing a substrate having a surface and a normal direction perpendicular to the surface, forming a first semiconductor layer on the surface, patterning the first semiconductor layer, forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer, and forming at least one hollow component formed between the first semiconductor layer and the surface. A height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction.

Claims

1. An optoelectronic device, comprising:

a substrate having a surface and a normal direction perpendicular to the surface;

a first semiconductor layer formed on the surface of the substrate; and

at least one hollow component formed between the first semiconductor layer and the surface of the substrate wherein a height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction.

2. The optoelectronic device of claim 1, wherein the width of the hollow component is further defined as the largest size of the hollow component perpendicular to the normal direction of the substrate and the height of the hollow component is further defined as the largest size of the hollow component parallel with the normal direction of the substrate, and the height is smaller than the width.

3. The optoelectronic device of claim 1, wherein the cross-sectional view of the hollow component is a bell shape or wizard'"'"'s hat shape.

4. The optoelectronic device of claim 1, wherein the width of at least one of the hollow component is 0.5 μ

m-10 μ

m and/or the ratio of the height and the width of at least one of the hollow component is smaller than 2/3.

5. The optoelectronic device of claim 1, wherein a plurality of the hollow components is formed between the first semiconductor layer and the substrate and at least two hollow components can link into a mesh or porous structure;

or the plurality of the hollow components can be formed as a regular array and the average distance of the hollow components can be 0.5 μ

m-10 μ

m and the porosity of the hollow components can be 5-90%.

6. The optoelectronic device of claim 1, further comprising an active layer and a second conductivity semiconductor layer formed on the first semiconductor layer wherein the material of the first semiconductor layer, the active layer, or the second semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

7. The optoelectronic device of claim 3, wherein the cross-sectional view of the hollow component is a wizard'"'"'s hat shape having a bottom section with disk shape and a upper section with cone shape wherein the top end of the upper section be an apical, arc, or ball shape, and the upper section is inside the bottom section in top-view.

8. The optoelectronic device of claim 7, wherein the bottom section having a length direction parallel with the surface of the substrate and the width of the bottom section in the length direction can be 0.5 μ

m-10 μ

m.

9. The optoelectronic device of claim 7, further comprising an angle θ

forms between the edge of the bottom section in the length direction and the surface of the substrate wherein the angle θ

can be 20°

-75°

.

10. A method of fabricating an optoelectronic device, comprising:

providing a substrate having a surface and a normal direction perpendicular to the surface;

forming a first semiconductor layer on the surface of the substrate;

patterning the first semiconductor layer;

forming a second semiconductor layer on the substrate and cover the patterned first semiconductor layer; and

forming at least one hollow component formed between the first semiconductor layer and the surface of the substrate wherein a height of the hollow component varies along with a first direction perpendicular to the normal direction and/or a width of the hollow component varies along with a second direction parallel with the normal direction.

11. The method of fabricating an optoelectronic device of claim 10, wherein the width of the hollow component is further defined as the largest size of the hollow component perpendicular to the normal direction of the substrate and the height of the hollow component is further defined as the largest size of the hollow component parallel with the normal direction of the substrate, and the height is smaller than the width.

12. The method of fabricating an optoelectronic device of claim 10,

wherein the method to patterning the first semiconductor comprising:

forming an anti-etching layer on the first semiconductor layer;

forming a plurality of photoresist layers on the anti-etching layer;

patterning the anti-etching layer; and

using the patterned anti-etching layer to anisotropic etching the first semiconductor layer.

13. The method of fabricating an optoelectronic device of claim 12, wherein the anisotropic etching is performed with an aqueous solution of at least one of H₂SO₄, H₃PO₄, H₂C₂O₄, HCl, KOH, and NaOH, ethylene glycol solution, or their mixture.

14. The method of fabricating an optoelectronic device of claim 10, wherein the cross-sectional view of the hollow component is bell shape or wizard'"'"'s hat shape.

15. The method of fabricating an optoelectronic device of claim 10, wherein the width of the hollow component is 0.5 μ

m-10 μ

m and/or the ratio of the height and the width of the hollow component is smaller than 2/3.

16. The method of fabricating an optoelectronic device of claim 10, wherein a plurality of the hollow components is formed between the first semiconductor layer and the substrate and at least two hollow components can link into a mesh or porous structure;

or the plurality of the hollow components can be formed as a regular array and the average distance of the hollow components can be 0.5 μ

m-10 μ

m and the porosity of the hollow components can be 5-90%.

17. The method of fabricating an optoelectronic device of claim 10, further comprising an active layer and a third conductivity semiconductor layer formed on the second semiconductor layer wherein the material of the first semiconductor layer, the second semiconductor layer, the active layer or the third semiconductor layer contains at least one element selected from the group consisting of Al, Ga, In, As, P, and N.

18. The method of fabricating an optoelectronic device of claim 14, wherein the cross-sectional view of the hollow component is wizard'"'"'s hat shape having a bottom section with disk shape and a upper section with cone shape wherein the top end of the upper section be an apical, arc or ball shape, and the upper section is inside the bottom section in top-view.

19. The method of fabricating an optoelectronic device of claim 18, wherein the bottom section having a length direction parallel with the surface of the substrate and the width of the bottom section in the length direction can be 0.5 μ

m-10 μ

m.

20. The method of fabricating an optoelectronic device of claim 18, further comprising an angle θ

forms between the edge of the bottom section in the length direction and the surface of the substrate wherein the angle θ

can be 20°

-75°

.