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SEMICONDUCTOR DEVICE

  • US 20120068274A1
  • Filed: 03/22/2011
  • Published: 03/22/2012
  • Est. Priority Date: 09/17/2010
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a substrate comprising an element isolation area;

    a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area; and

    a large active area comprising at least a part of the active areas, an outline of the large active area including a bump,wherein among the impurity diffusion areas of the active areas, impurity diffusion areas facing through the element isolation area are electrically connected.

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