SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a substrate comprising an element isolation area;
a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area; and
a large active area comprising at least a part of the active areas, an outline of the large active area including a bump,wherein among the impurity diffusion areas of the active areas, impurity diffusion areas facing through the element isolation area are electrically connected.
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Abstract
According to one embodiment, a semiconductor device has a substrate comprising an element isolation area, a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area, a large active area comprising at least a part of the active areas, an outline of the large active area including a bump. Among the impurity diffusion areas of the active areas, impurity diffusion areas facing through the element isolation area are electrically connected.
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Citations
14 Claims
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1. A semiconductor device comprising:
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a substrate comprising an element isolation area; a plurality of tetragonal active areas on the substrate separated by the element isolation area from each other, each of the active areas having an impurity diffusion area; and a large active area comprising at least a part of the active areas, an outline of the large active area including a bump, wherein among the impurity diffusion areas of the active areas, impurity diffusion areas facing through the element isolation area are electrically connected. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification