SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

• US 20120068308A1
• Filed: 11/23/2011
• Published: 03/22/2012
• Est. Priority Date: 06/29/2009
• Status: Active Grant

• Current Assignee: Fujitsu Limited, Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited, Fujitsu Semiconductor Limited (Fujitsu Limited)
• Inventors: Igeta, Mitsuaki, Suzuki, Takashi
• Granted Patent: US 8,946,857 B2
• Time in Patent Office: Days
• US Class Current: 257/536
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes a semiconductor substrate, a heat generating device, and a heat radiating part. The heat generating device is provided on the semiconductor substrate, and the heat radiating part is provided above the heat generating device. The heat radiating part is thermally coupled with the semiconductor substrate through at least one contact part.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a heat generating device provided on the semiconductor substrate; and

a heat radiating part provided above the heat generating device, wherein

the heat radiating part is thermally coupled with the semiconductor substrate through at least one contact part.

2. The semiconductor device as claimed in claim 1, wherein

the heat radiating part is provided above the heat generating device through a first insulating layer, and

the contact part is provided inside a via hole which is formed in the first insulating layer.

3. The semiconductor device as claimed in claim 1, wherein

the semiconductor device further comprises an interconnect provided above the heat radiating part via a second insulating layer, and

a temperature rise of the interconnect is reduced by dispersion of heat from the heat radiating part to the semiconductor substrate.

4. The semiconductor device as claimed claim 1, wherein

the heat generating device is provided at the semiconductor substrate on a well which is electrically isolated by a first insulation region through a second insulation region, and

the contact part thermally couples the heat radiating part and the well and disperses the heat of the heat radiating part through the well to the semiconductor substrate.

5. The semiconductor device as claimed in claim 4, wherein

the heat radiating part and the contact part are conductive substances,

the heat generating device is a resistance device, and

the heat radiating part is made an equal potential with the well through the contact part.

6. The semiconductor device as claimed in claim 5, wherein

the potential of the well is made a fixed potential so as to electrically shield against noise from the resistance device.

7. The semiconductor device as claimed in claim 1, wherein

the contact part is provided at least at one end of the heat radiating part.

8. The semiconductor device as claimed in claim 7, wherein

contact parts are provided at the two ends of the heat radiating part.

9. The semiconductor device as claimed in claim 7, wherein

contact parts are provided at the entire circumference of the heat radiating part.

10. A semiconductor device production method comprising:

forming on a semiconductor substrate a first insulated region which insulates from the surroundings and a second insulated region inside of the first insulated region;

implanting an impurity into the first insulated region to form a well;

forming a heat generating device on the second insulated region inside of the well;

forming a heat radiating part above the heat generating device through a first insulating layer; and

using at least one via hole which is formed in the first insulating layer to form at least one contact part which thermally couples the heat radiating part and the well.

11. The semiconductor device production method as claimed in claim 10, wherein the semiconductor device production method further comprises:

forming an interconnect above the heat radiating part via a second insulating layer.

12. The semiconductor device production method as claimed in claim 10, wherein the semiconductor device production method further comprises:

forming the well, then implanting an impurity to form an active region in the well.

13. The semiconductor device production method as claimed in claim 12, wherein

the semiconductor substrate is a silicon substrate, and

the semiconductor device production method further comprises:

forming the active region, then forming a silicide layer on the surface of the well; and

coupling the contact part and the well through the silicide layer and the active region.

14. The semiconductor device production method as claimed in claim 10, wherein

the heat radiating part and the contact part are conductive substances, and the heat generating device is a resistance device.

15. The semiconductor device production method as claimed in claim 14, wherein

the heat radiating part and the contact part are conductive substances,

the heat radiating part is made equal in potential to the well through the contact part, and

the potential of the well is made a fixed potential and noise from the resistance device is electrically shielded against.