METHOD FOR PRODUCING A LIGHT-EMITTING DIODE

• US 20120070926A1
• Filed: 04/08/2010
• Published: 03/22/2012
• Est. Priority Date: 05/26/2009
• Status: Active Grant

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Kräuter, Gertrud
• Granted Patent: US 9,806,237 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: C23C 24/04 Impact or kinetic deposition of particles
• CPC Class Codes: C23C 4/134 Plasma spraying
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

A method for producing a light-emitting diode includes providing a light-emitting diode chip including a semiconductor body, and applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or providing a radiation-transmissive carrier, applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.

Claims

1. A method for producing a light-emitting diode comprising:

providing a light-emitting diode chip comprising a semiconductor body, and

applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material, or

providing a radiation-transmissive carrier,

applying a luminescence conversion material to an outer area of the carrier by thermal spraying, and

arranging the carrier at a radiation exit area of the light-emitting diode chip such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material.

3. The method according to claim 1, wherein particles of the luminescence conversion material have an average diameter of between 1 μ

m and 50 μ

m, wherein the luminescence conversion material is suitable for down-conversion of electromagnetic radiation.

4. The method according to claim 1, wherein the thermal spraying is cold gas spraying.

5. The method according to claim 1, wherein the thermal spraying is atmospheric plasma spraying.

6. The method according to claim 1, wherein the luminescence conversion material comprises at least one inorganic phosphor.

7. The method according to claim 6, wherein the luminescence conversion material comprises at least one inorganic phosphor selected from the group consisting of garnets doped with rare earth metals, alkaline earth metal sulfides doped with rare earth metals, thiogallates doped with rare earth metals, aluminates doped with rare earth metals, orthosilicates doped with rare earth metals, chlorosilicates doped with rare earth metals, alkaline earth metal silicon nitrides doped with rare earth metals, oxynitrides doped with rare earth metals and aluminum oxynitrides doped with rare earth metals.

8. The method according to claim 1, wherein the luminescence conversion material comprises at least one organic phosphor.

9. The method according to claim 8, wherein the luminescence conversion material comprises at least one organic phosphor selected from the group consisting of perylenes, benzopyrenes, coumarins, rhodamines, azo dye, terylene dye, quaterylene dye, naphthalimide dye, cyanine dye, xanthene dye, oxazine dye, anthracene dye, naphthacene dye, anthraquinone dye and thiazine dye.

10. The method according to claim 1, wherein the luminescence conversion material comprises at least one inorganic phosphor and an organic phosphor.

11. The method according to claim 1, wherein after the luminescence conversion material has been applied, part of the luminescence conversion material is removed.

12. The method according to claim 1, wherein the thermal spraying is a nanopowder plasma deposition method and average diameter of deposited particles of the luminescence conversion material is between 1 nm and 100 nm, wherein the luminescence conversion material is suitable for down-conversion of electromagnetic radiation.

16. The method according to claim 11, wherein a layer thickness and/or a structuring of a layer composed of the luminescence conversion material is set by removing.

17. The method according to claim 11, wherein a color locus of a mixed light emitted by the light-emitting diode chip and the luminescence conversion material is set by removing.

2. (canceled)

13. A method for producing a light-emitting diode comprising:

providing a light-emitting diode chip comprising a semiconductor body, and

applying a luminescence conversion material to an outer area of the semiconductor body by thermal spraying such that at least part of electromagnetic radiation generated during operation of the light-emitting diode impinges on the luminescence conversion material,

wherein the light-emitting diode chip comprises a semiconductor body comprising a plurality of semiconductor layers grown epitaxially and at least one active region in which electromagnetic radiation is generated during operation of the light-emitting diode chip, and

after the luminescence conversion material has been applied, part of the luminescence conversion material is removed.

14. The method according to claim 13, wherein a layer thickness and/or a structuring of a layer composed of the luminescence conversion material is set by removing.

15. The method according to claim 13, wherein a color locus of a mixed light emitted by the light-emitting diode chip and the luminescence conversion material is set by removing.