ELECTRODE PLATE FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS

• US 20120073753A1
• Filed: 09/26/2011
• Published: 03/29/2012
• Est. Priority Date: 09/27/2010
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: SATOH, Naoyuki, NAGAYAMA, Nobuyuki, NAGAKUBO, Keiichi
• Granted Patent: US 9,117,635 B2
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: C23C 16/455 characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45563 Gas nozzles
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01J 37/32541 Shape

Abstract

An electrode plate for a plasma etching is formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region.

Claims

1. An electrode plate for a plasma etching formed as a disc shape having a predetermined thickness, the electrode plate comprising:

a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface, and provided on different circumferences of a plurality of concentric circles,

wherein the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region, and the types of gas holes comprise bent type gas holes.

2. The electrode plate of claim 1, wherein the gas holes provided in a region including at least the outermost circumference from among the two or more regions are the bent type gas holes.

3. The electrode plate of claim 2, wherein each bent type gas hole comprises:

a straight pore penetrating the surface of the electrode plate perpendicularly to the surface; and

a sloping pore communicating with the straight pore in the electrode plate, and penetrating the other surface of the electrode plate non-perpendicularly to the other surface.

4. The electrode plate of claim 3, wherein the bent type gas hole is at least one of an inclined hole comprising the straight pore and the sloping pore, and a Y-shaped hole comprising the straight pore, the sloping pore, and a trap pore forming a path branching from a connecting point between the straight pore and the sloping pore.

5. The electrode plate of claim 4, wherein each type of gas holes is provided in the corresponding region based on a first arrangement rule, in which a region where the Y-shaped holes are provided is located on an outer circumferential side of a region where the inclined holes are provided, and the region where the inclined holes are provided is located on an outer circumferential side of a region where standard holes penetrating the electrode plate straight in a thicknesswise direction of the electrode plate are provided.

6. The electrode plate of claim 5, wherein the inclined holes comprise first inclined holes and second inclined holes having a ratio between lengths of the straight pore and the sloping pore, which is less than a ratio of the first inclined holes, and each type of gas holes is provided in the corresponding region based on a second arrangement rule, in which a region where the first inclined holes are provided is located on an inner circumferential side of a region where the second inclined holes are provided.

7. The electrode plate of claim 6, wherein the electrode plate is divided into three regions on an inner circumferential side, an outer circumferential side, and an intermediate side between the inner circumferential side and the outer circumferential side in the radial direction of the electrode plate, and the gas holes corresponding to the first and second arrangement rules from among the Y-shaped holes, the first inclined holes, the second inclined holes, and the standard holes are provided as the gas holes on the inner circumferential side, the gas holes on the outer circumferential side, and the gas holes on the intermediate side.

8. The electrode plate of claim 7, wherein the types of a plurality of gas holes provided in each of the three regions are the same as each other.

9. The electrode plate of claim 8, wherein the types of a plurality of gas holes provided in two adjacent regions among the three regions are the same as each other.

10. The electrode plate of claim 6, wherein the Y-shaped holes, the first inclined holes, and the second inclined holes are communicated with gas holes provided in a cooling plate that is adjacent to the electrode plate.

11. An electrode plate for a plasma etching formed as a disc shape having a predetermined thickness, the electrode plate comprising:

a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface, and provided on different circumferences of a plurality of concentric circles,

wherein the electrode plate is divided in a radial direction of the electrode plate into two or more regions, and the gas holes provided in each of the two or more regions are bent type gas holes of the same type.

12. A plasma etching apparatus comprising:

a process chamber;

a first electrode and a second electrode facing each other in the process chamber and having a plasma generating space between the first and second electrodes; and

a gas supply source which supplies a gas into the process chamber,

wherein the first electrode comprises an electrode plate formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, types of gas holes provided in the two or more regions are different from each other by region, and the types of gas holes comprise bent type gas holes.

14. The plasma etching apparatus of claim 12, wherein the first electrode is an upper electrode.

13. A plasma etching apparatus comprising:

a process chamber;

a first electrode and a second electrode facing each other in the process chamber and having a plasma generating space between the first and second electrodes; and

a gas supply source which supplies a gas into the process chamber,

wherein the first electrode comprises an electrode plate formed as a disc shape having a predetermined thickness, a plurality of gas holes penetrating a surface of the electrode plate perpendicularly to the surface are provided on different circumferences of a plurality of concentric circles, the electrode plate is divided in a radial direction of the electrode plate into two or more regions, and the gas holes provided in each of the two or more regions are bent type gas holes of the same type.