Multi-chip Semiconductor Packages and Assembly Thereof

• US 20120074546A1
• Filed: 09/24/2010
• Published: 03/29/2012
• Est. Priority Date: 09/24/2010
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Lee, Teck Sim, Chong, Chooi Mei
• Granted Patent: US 8,836,101 B2
• Time in Patent Office: Days
• US Class Current: 257/676
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/37099 Material
• CPC Class Codes: H01L 2224/37599 Material
• CPC Class Codes: H01L 2224/40247 Connecting the strap to a bond pad of the item
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48145 the bodies being stacked
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 : connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48611 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/48639 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48644 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48669 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48711 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/48739 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48744 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48769 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48811 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/48839 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48869 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/49171 : Fan-out arrangements
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73263 : Layer and strap connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83805 : involving forming a eutectic alloy at the bonding interface
• CPC Class Codes: H01L 2224/83815 : Reflow soldering
• CPC Class Codes: H01L 2224/83855 : Hardening the adhesive by curing, i.e. thermosetting
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/8485 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 2224/85095 : Temperature settings
• CPC Class Codes: H01L 2224/85411 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/85439 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/85444 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/85469 : Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/92246 : the second connecting process involving a strap connector
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/49503 : characterised by the die pad
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49537 : Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/16 : the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

Semiconductor packages and method of fabricating them are described. In one embodiment, the semiconductor package includes a substrate having a first and a second die attach pad. A first die is disposed over the first die attach pad. A second die is disposed over the second die attach pad. A third die is disposed between the first and the second die. The third die having a first, a second, and a third portion such that the first portion is disposed above a portion of the first die, the second portion is disposed above a portion of the second die, and the third portion is disposed above an area between the first die and the second die.

Claims

1. A semiconductor package comprising:

a substrate comprising a first and a second die attach pad;

a first die disposed over the first die attach pad;

a second die disposed over the second die attach pad;

a third die disposed between the first and the second die, a first portion of the third die disposed above a first portion of the first die, a second portion of the third die disposed above a first portion of the second die, and a third portion of the third die disposed above a first area between the first die and the second die.

2. The package of claim 1, further comprising:

a fourth die disposed over the first die attach pad, the fourth die disposed adjacent the first die, wherein a fourth portion of the third die is disposed above a portion of the fourth die;

a fifth die disposed over the second die attach pad, the fifth die disposed adjacent the second die, wherein a fifth portion of the third die is disposed above a portion of the fifth die, and wherein a sixth portion of the third die is disposed above a first area between the fourth die and the fifth die.

3. The package of claim 2, further comprising:

a sixth die disposed over the first die attach pad, the sixth die disposed adjacent the first die, wherein a seventh portion of the third die is disposed above a portion of the sixth die;

a seventh die disposed over the second die attach pad, the seventh die disposed adjacent the second die, wherein a eight portion of the third die is disposed above a portion of the seventh die, and wherein a ninth portion of the third die is disposed above a first area between the sixth die and the seventh die.

4. The package of claim 3, wherein the first die is disposed between the fourth and the sixth dies, wherein the second die is disposed between the fifth and the seventh dies.

5. The package of claim 1, further comprising:

a fourth die disposed between the first die and the second die, a first portion of the fourth die disposed above a second portion of the first die, a second portion of the fourth die disposed above a second portion of the second die, and a third portion of the fourth die disposed above a second area between the first die and the second die.

6. The package of claim 5, further comprising:

a fifth die disposed between the first and the second die, a first portion of the fifth die disposed above a third portion of the first die, a second portion of the fifth die disposed above a third portion of the second die, and a third portion of the fifth die disposed above a third area between the first die and the second die.

7. The package of claim 6, wherein the first and the second dies are about a first size, wherein the third and the fourth dies are about a second size different from the first size, and wherein the fifth die is a different size from the first and the second sizes.

8. The package of claim 5, further comprising:

a fifth die disposed between the first and the second die, a first portion of the fifth die disposed above a region of the third portion of the third die, a second portion of the fifth die disposed above a region of the third portion of the fourth die, and a third portion of the fifth die disposed above a first area between the third die and the fourth die.

9. The package of claim 8, wherein the first and the second dies are about a first size, wherein the third and the fourth dies are about a second size different from the first size, and wherein the fifth die is a different size from the first and the second sizes.

10. The package of claim 1, wherein the first die is disposed over a first portion of the first die attach pad and over a first portion of the second die attach pad, wherein the second die is disposed over a second portion of the second die attach pad and over a first portion of a third die attach pad.

11. The package of claim 1, wherein the first die is coupled to first contact leads on the substrate via first connectors, wherein the second die is coupled to second contact leads on the substrate via second connectors, and wherein the third die is coupled to third contact leads on the substrate via bond wires.

12. The package of claim 1, wherein a first plurality of bond wires couple the third die with the first die, and wherein a second plurality of bond wires couple the third die with the second die.

13. The package of claim 1, wherein the substrate is a leadframe.

14. The package of claim 1, wherein the substrate is a dual flat non-lead leadframe.

15. The package of claim 1, wherein the substrate, the first, the second, and the third dies are encapsulated with a molding material.

16. The package of claim 1, further comprising:

a fourth die disposed over the first die attach pad;

a fifth die disposed over the second die attach pad;

a sixth die disposed between the fourth and the fifth die, a first portion of the sixth die disposed above a first portion of the fourth die, a second portion of the sixth die disposed above a first portion of the fifth die, and a third portion of the sixth die disposed above a first area between the fourth die and the fifth die.

17. A semiconductor package comprising:

a substrate comprising a first and a second die attach pad;

a first die disposed over the first die attach pad;

a second die disposed over the second die attach pad;

a third die disposed between the first and the second die, a first portion of the third die disposed above a first portion of the first die, a second portion of the third die disposed above a first portion of the second die, and a third portion of the third die disposed above a first area between the first die and the second die;

a fourth die disposed over the first die attach pad, the fourth die disposed adjacent the first die, wherein a fourth portion of the third die is disposed above a portion of the fourth die; and

a fifth die disposed over the second die attach pad, the fifth die disposed adjacent the second die, wherein a fifth portion of the third die is disposed above a portion of the fifth die, and wherein a sixth portion of the third die is disposed above a first area between the fourth die and the fifth die.

18. The package of claim 17, further comprising:

a sixth die disposed over the first die attach pad, the sixth die disposed adjacent the first die, wherein a seventh portion of the third die is disposed above a portion of the sixth die;

a seventh die disposed over the second die attach pad, the seventh die disposed adjacent the second die, wherein an eighth portion of the third die is disposed above a portion of the seventh die, and wherein a ninth portion of the third die is disposed above a first area between the sixth die and the seventh die.

19. The package of claim 18, wherein the first die is disposed between the fourth and the sixth dies, wherein the second die is disposed between the fifth and the seventh dies.

20. The package of claim 17, wherein the first die is disposed over a first portion of the first die attach pad and over a first portion of the second die attach pad, wherein the second die is disposed over a second portion of the second die attach pad and over a first portion of a third die attach pad, wherein the fourth die is disposed over a second portion of the first die attach pad and over a third portion of the second die attach pad, and wherein the fifth die is disposed over a fourth portion of the second die attach pad and over a second portion of a third die attach pad.

21. The package of claim 17, wherein the first die is coupled to first contact leads on the substrate via first connectors, wherein the second die is coupled to second contact leads on the substrate via second connectors, wherein the third die is coupled to third contact leads on the substrate via bond wires, wherein the fourth die is coupled to fourth contact leads on the substrate via third connectors, and wherein the fifth die is coupled to fifth contact leads on the substrate via fourth connectors.

22. The package of claim 17, wherein a first plurality of bond wires couples the third die with the first die, wherein a second plurality of bond wires couples the third die with the second die, wherein a third plurality of bonds wire couples the third die with the fourth die, and wherein a fourth plurality of bond wires couples the third die with the fifth die.

23. A method of making a semiconductor package, the method comprising:

attaching a first die over a first die attach pad of a substrate;

attaching a second die over a second die attach pad of the substrate; and

attaching a third die to the first and the second die, wherein a first portion of the third die is attached to a first portion of the first die, wherein a second portion of the third die is attached to a first portion of the second die, and wherein a third portion of the third die is attached to a first area between the first die and the second die.

24. The method of claim 23, wherein attaching the first and the second dies comprise applying a solder paste to a surface of the first and the second dies;

placing the first and the second dies over the first and the second die attach pads; and

heating the solder paste to form a solder.

25. The method of claim 23, wherein attaching the third die comprises:

applying an adhesive film on a surface of the third die; and

curing the adhesive film.

26. The method of claim 23, further comprising:

wire bonding to couple the third die with the substrate and to couple the third die with the first and the second dies;

covering the first, the second, and the third dies with a molding material;

curing the molding material to form an encapsulant;

deflashing to remove any excess encapsulant;

plating contact leads of the substrate; and

singulating the encapsulated substrate.