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Semiconductor Device and Method of Bonding Different Size Semiconductor Die at the Wafer Level

  • US 20120074587A1
  • Filed: 09/13/2011
  • Published: 03/29/2012
  • Est. Priority Date: 09/29/2010
  • Status: Active Grant
First Claim
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1. A method of making a semiconductor device, comprising:

  • providing a semiconductor wafer having first and second opposing surfaces;

    forming a plurality of conductive vias partially through the first surface of the semiconductor wafer;

    singulating the semiconductor wafer into a plurality of first semiconductor die;

    providing a carrier;

    mounting the first semiconductor die to the carrier;

    mounting a second semiconductor die to the first semiconductor die;

    depositing an encapsulant over the first and second semiconductor die and carrier;

    removing the carrier and a portion of the second surface to expose the conductive vias; and

    forming an interconnect structure over a surface of the first semiconductor die opposite the second semiconductor die.

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