Semiconductor Device and Method of Bonding Different Size Semiconductor Die at the Wafer Level
First Claim
1. A method of making a semiconductor device, comprising:
- providing a semiconductor wafer having first and second opposing surfaces;
forming a plurality of conductive vias partially through the first surface of the semiconductor wafer;
singulating the semiconductor wafer into a plurality of first semiconductor die;
providing a carrier;
mounting the first semiconductor die to the carrier;
mounting a second semiconductor die to the first semiconductor die;
depositing an encapsulant over the first and second semiconductor die and carrier;
removing the carrier and a portion of the second surface to expose the conductive vias; and
forming an interconnect structure over a surface of the first semiconductor die opposite the second semiconductor die.
5 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor wafer has first and second opposing surfaces. A plurality of conductive vias is formed partially through the first surface of the semiconductor wafer. The semiconductor wafer is singulated into a plurality of first semiconductor die. The first semiconductor die are mounted to a carrier. A second semiconductor die is mounted to the first semiconductor die. A footprint of the second semiconductor die is larger than a footprint of the first semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. The carrier is removed. A portion of the second surface is removed to expose the conductive vias. An interconnect structure is formed over a surface of the first semiconductor die opposite the second semiconductor die. Alternatively, a first encapsulant is deposited over the first semiconductor die and carrier, and a second encapsulant is deposited over the second semiconductor die.
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Citations
25 Claims
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1. A method of making a semiconductor device, comprising:
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providing a semiconductor wafer having first and second opposing surfaces; forming a plurality of conductive vias partially through the first surface of the semiconductor wafer; singulating the semiconductor wafer into a plurality of first semiconductor die; providing a carrier; mounting the first semiconductor die to the carrier; mounting a second semiconductor die to the first semiconductor die; depositing an encapsulant over the first and second semiconductor die and carrier; removing the carrier and a portion of the second surface to expose the conductive vias; and forming an interconnect structure over a surface of the first semiconductor die opposite the second semiconductor die. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of making a semiconductor device, comprising:
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providing a plurality of first semiconductor die; forming a plurality of conductive vias through the first semiconductor die; providing a carrier; mounting the first semiconductor die to the carrier; mounting a second semiconductor die to the first semiconductor die, wherein a footprint of the second semiconductor die is larger than a footprint of the first semiconductor die; and depositing an encapsulant over the first and second semiconductor die and carrier. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method of making a semiconductor device, comprising:
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providing a plurality of first semiconductor die; forming a plurality of conductive vias through the first semiconductor die; providing a carrier; mounting the first semiconductor die to the carrier; depositing a first encapsulant over the first semiconductor die and carrier; removing the carrier; mounting a second semiconductor die to the first semiconductor die; and depositing a second encapsulant over the second semiconductor die. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A semiconductor device, comprising:
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a first semiconductor die having a plurality of conductive vias formed through the first semiconductor die; a second semiconductor die mounted to the first semiconductor die, wherein a footprint of the second semiconductor die is larger than a footprint of the first semiconductor die; an encapsulant deposited over the first and second semiconductor die; and an interconnect structure formed over the first semiconductor die opposite the second semiconductor die. - View Dependent Claims (22, 23, 24, 25)
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Specification