PROCESS TUNING WITH POLARIZATION

• US 20120075603A1
• Filed: 09/21/2011
• Published: 03/29/2012
• Est. Priority Date: 09/23/2010
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: HANSEN, George Steven, Mulder, Melle Heine, Chiou, Tsann-Bim
• Granted Patent: US 9,563,135 B2
• Time in Patent Office: Days
• US Class Current: 355/67
• CPC Class Codes: G03F 7/7005 by multiple sources, e.g. light-emitting diodes [LED] or light source arrays addressable array sources specially adapted to produce patterns without a mask G03F7/70391
• CPC Class Codes: G03F 7/70566 Polarisation control
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A method for configuring an illumination source of a lithographic apparatus, the method including dividing the illumination source into pixel groups, each pixel group including one or more illumination source points in a pupil plane of the illumination source; changing a polarization state of each pixel group and determining an incremental effect on each of the plurality of critical dimensions resulting from the change of polarization state; calculating a first plurality of sensitivity coefficients for each of the plurality of critical dimensions using the determined incremental effects; selecting an initial illumination source; iteratively calculating a lithographic metric as a result of a change of polarization state using the calculated first plurality of sensitivity coefficients, the change of the polarization state of the pixel group in the initial illumination source creating a modified illumination source; and adjusting the initial illumination source based on the iterative results of calculations.

Claims

1. A method for configuring an illumination source of a lithographic apparatus to enhance the imaging of a mask pattern onto a substrate, the image of the mask pattern on the substrate having a plurality of critical dimensions, the method comprising:

dividing the illumination source into pixel groups, each pixel group including one or more illumination source points in a pupil plane of the illumination source;

changing a polarization state of each pixel group and determining an incremental effect on each of the plurality of critical dimensions resulting from the change of polarization state of each pixel group;

calculating a first plurality of sensitivity coefficients for each of the plurality of critical dimensions using the determined incremental effects;

selecting an initial illumination source;

iteratively calculating a lithographic metric as a result of a change of polarization state of a pixel group in the initial illumination source using the calculated first plurality of sensitivity coefficients, the change of the polarization state of the pixel group in the initial illumination source creating a modified illumination source; and

adjusting the initial illumination source based on the iterative results of calculations.

2. The method of claim 1, wherein the lithographic metric is a critical dimension uniformity of the pattern, a process window, a dimension of the process window, MEEF, maximum NILS, maximum NILS in defocus, depth of focus or an exposure latitude.

3. The method of claim 1, comprising

changing an intensity of each pixel group and determining an incremental effect on each of the plurality of critical dimensions resulting from the change of intensity of each pixel group;

calculating a second plurality of sensitivity coefficients for each of the plurality of critical dimensions using the incremental effects determined by the change of intensity of each pixel group; and

iteratively calculating the lithographic metric as a result of a change of intensity of a pixel group in the initial illumination source using the calculated second plurality of sensitivity coefficients, the change of intensity of the pixel group in the initial illumination source creating another modified illumination source.

4. The method of claim 1, comprising modifying the adjusted illumination source to account for 3 dimensional mask effects, wherein the modifying includes

for each pixel group of the adjusted illumination source, calculating the lithographic metric as a result of a change of polarization state or the illumination state of the pixel group using the calculated first plurality of sensitivity coefficients, the lithographic metric being calculated using 3 dimensional mask effects.

5. A computer product having machine executable instructions, the instructions being executable by a machine to perform a method for configuring an illumination source of a lithographic apparatus to enhance the imaging of a mask pattern onto a substrate, the image of the mask pattern onto the substrate having a plurality of critical dimensions, the method comprising:

dividing the illumination source into pixel groups, each pixel group including one or more illumination source points in a pupil plane of the illumination source;

changing a polarization state of each pixel group and determining an incremental effect on each of the plurality of critical dimensions resulting from the change of polarization state of each pixel group;

calculating a first plurality of sensitivity coefficients for each of the plurality of critical dimensions using the determined incremental effects;

selecting an initial illumination source;

iteratively calculating a lithographic metric as a result of a change of polarization state of a pixel group in the initial illumination source using the calculated first plurality of sensitivity coefficients, the change of the polarization state of the pixel group in the initial illumination source creating a modified illumination source; and

adjusting the initial illumination source based on the iterative results of calculations.

6. A lithographic apparatus comprising:

an illumination source configured to condition a beam of radiation;

a substrate table configured to hold a substrate;

a projection system configured to project a beam of radiation patterned by a patterning device onto a surface of the substrate; and

a processor configured to perform a method for configuring the illumination source to enhance the imaging of a pattern onto a substrate, the image of the mask pattern onto the substrate having a plurality of critical dimensions, the method comprising;

dividing the illumination source into pixel groups, each pixel group including one or more illumination source points in a pupil plane of the illumination source;

changing a polarization state of each pixel group and determining an incremental effect on each of the plurality of critical dimensions resulting from the change of polarization state of each pixel group;

calculating a first plurality of sensitivity coefficients for each of the plurality of critical dimensions using the determined incremental effects;

selecting an initial illumination source;

iteratively calculating a lithographic metric as a result of a change of polarization state of a pixel group in the initial illumination source using the calculated first plurality of sensitivity coefficients, the change of the polarization state of the pixel group in the initial illumination source creating a modified illumination source; and

adjusting the initial illumination source based on the iterative results of calculations.

7. A method for configuring an illumination source of a lithographic apparatus to enhance the imaging of a mask pattern, the method comprising:

dividing a pupil plane of the illumination source into pixel groups, each pixel group including one or more illumination source pixels in the pupil plane;

selecting an initial set of pixel groups of the illumination source as an initial illumination source;

iteratively changing a polarization state of a pixel group from at least a subgroup of the set of selected pixel groups in the initial illumination source, calculating a lithographic metric associated with at least a part of the mask pattern as a result of the changed polarization state, and applying the change of the polarization state of the pixel group to generate a modified illumination source when the calculated lithographic metric is improved due to the changed polarization state; and

adjusting the initial set of pixel groups of the illumination source based on the iterative results of calculations.

8. The method of claim 7, wherein the lithographic metric is a critical dimension uniformity of the pattern, a process window, a dimension of the process window, MEEF, maximum NILS, maximum NILS in defocus, depth of focus or an exposure latitude.

9. The method according to claim 7, wherein the method further comprises determining a polarization sensitivity coefficient defining a sensitivity of the polarization change of a pixel group to the lithographic metric associated with the at least part of the mask pattern, the polarization sensitivity coefficient of a pixel group being determined by:

changing a polarization state of the pixel group;

determining an incremental effect on the lithographic metric associated with at least a part of the mask pattern resulting from the change of polarization state of the pixel group;

calculating the polarization sensitivity coefficients for the lithographic metric using the determined incremental effect; and

wherein the changing of the polarization state in the iterative process steps include using the calculated polarization sensitivity coefficient to adapt the polarization of the pixel group.

10. The method according to claim 9, wherein the polarization sensitivity coefficient is determined for the selected pixel groups in the initial illumination source.

11. The method according to claim 7, wherein the at least a part of the mask pattern comprises a critical dimension or a plurality of critical dimensions.

12. The method according to claim 7, wherein the method further comprises determining an intensity sensitivity coefficient defining a sensitivity of an intensity change of a pixel group to the lithographic metric associated with the at least part of the mask pattern, the intensity sensitivity coefficient of a pixel group being determined by:

changing an intensity of the pixel group;

determining an incremental effect on the lithographic metric associated with at least a part of the mask pattern resulting from the change of intensity of the pixel group;

calculating the intensity sensitivity coefficients for the lithographic metric using the determined incremental effect; and

wherein the method for configuring the illumination source further comprises;

iteratively calculating the lithographic metric as a result of a change of intensity of the pixel group in the initial illumination source using the calculated intensity sensitivity coefficient, the change of intensity of the pixel group in the initial illumination source creating another modified illumination source.

13. The method according to claim 7, wherein the intensity sensitivity coefficient is determined for the selected pixel groups in the initial illumination source.

14. The method according to claim 7, wherein prior to selecting an initial set of pixel groups of the illumination source as an initial illumination source, the method includes performing a source mask optimization procedure using scalar imaging to find a preliminary optimized illumination source and a preliminary optimized mask pattern.

15. The method according to claim 14, wherein the initial illumination source is the preliminary optimized illumination source.

16. A method for configuring an illumination source of a lithographic apparatus to enhance the imaging of a mask pattern, the method comprising:

performing a source mask optimization procedure using scalar imaging to provide a preliminary optimized illumination source and a preliminary optimized mask pattern, and

performing a source mask polarization optimization procedure using, as initial conditions, the preliminary optimized illumination source and the preliminary optimized mask pattern.

17. A method for configuring a transfer of an image of a pattern onto a substrate in a lithographic apparatus, said pattern to be illuminated by an illumination source of the lithographic apparatus, the method comprising:

determining a first illumination source configured to illuminate said pattern;

performing a source mask polarization optimization procedure that takes into account three dimensional effects associated with said pattern, said source mask polarization optimization procedure performed using said first illumination source as an initial illumination source in said source mask polarization optimization procedure.

18. The method of claim 17, wherein the pattern is arranged on a support and the three dimensional effects are taken into account by using a thickness of the support and/or a material of the support in said source mask polarization optimization procedure.

19. The method of claim 18, wherein said source mask polarization optimization procedure is performed to reduce focus shifts and/or focus tilts due to three dimensional effects generated by said support.

20. The method of claim 17, wherein determining the first illumination source comprises

performing a first source mask polarization optimization procedure, or

performing a source mask optimization procedure with or without taking into account the three dimensional effects.