HOUSING AND MANUFACTURING METHOD THEREOF

• US 20120077024A1
• Filed: 01/21/2011
• Published: 03/29/2012
• Est. Priority Date: 09/23/2010
• Status: Active Grant

• Current Assignee: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. (Hon Hai Precision Industry Co., Ltd.), Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hong Fu Jin Precision Industry (Shenzhen) Co., Ltd. (Hon Hai Precision Industry Co., Ltd.), Hon Hai Precision Industry Co., Ltd.
• Inventors: CHANG, HSIN-PEI, CHEN, WEN-RONG, CHIANG, HUANN-WU, CHEN, CHENG-SHI, HU, ZHI-JIE
• Granted Patent: US 8,512,858 B2
• Time in Patent Office: Days
• US Class Current: 428/332
• CPC Class Codes: H05K 9/0084 comprising a single continuous metallic layer on an electrically insulating supporting structure, e.g. metal foil, film, plating coating, electro-deposition, vapour-deposition
• CPC Class Codes: Y10T 428/12576 Boride, carbide or nitride component
• CPC Class Codes: Y10T 428/12611 Oxide-containing component
• CPC Class Codes: Y10T 428/26 Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/265 1 mil or less

Abstract

A housing includes a substrate and a nano-composite layer deposited on the substrate. The nano-composite layer includes a number of metal oxide nitride layers and a number of Ce layers. Each metal oxide nitride layer alternates with a Ce layer, and the outermost nano-composite layer is a metal oxide nitride layer. The metal in the metal oxide nitride layer aluminum, titanium, silicon, chromium, or zirconium.

Claims

1. A housing, comprising:

a substrate; and

a nano-composite layer deposited on the substrate, the nano-composite layer comprising a number of metal oxide nitride layers and an equal number of Ce layers, and each metal oxide nitride layer alternating with a Ce layer, the outermost layer of the nano-composite layer being a metal oxide nitride layer;

wherein metal in the metal oxide nitride layer is a selected from a group consisting of aluminum, titanium, silicon, chromium and zirconium.

2. The housing as claimed in claim 1, wherein the substrate is made of metallic element.

3. The housing as claimed in claim 2, wherein the metallic element is selected from a of aluminum, aluminum alloy, magnesium and magnesium alloy.

4. The housing as claimed in claim 1, wherein the layer of the nano-composite layer contacting with the substrate is by a metal oxide nitride layer or a Ce layer.

5. The housing as claimed in claim 1, wherein the metal oxide nitride layers and the Ce layers are deposited by magnetron sputtering.

6. The housing as claimed in claim 1, wherein the nano-composite layer has a thickness ranging from about 1 μ

m to about 3 μ

ms.

7. The housing as claimed in claim 1, wherein the number of metal oxide nitride layers and the number of Ce layers is each about 6˜

30.

8. The housing as claimed in claim 1, wherein the atomic nitrogen content and the atomic oxygen content in each metal oxide nitride layers is the same.

9. The housing as claimed in claim 1, wherein the atomic nitrogen content and the atomic oxygen content in metal oxide nitride layers are each gradually increased from near the substrate to away from the substrate.

10. A method for manufacturing an article comprising the steps of:

providing a substrate, wherein the substrate is made of made of aluminum, aluminum alloy, magnesium or magnesium alloy; and

depositing a nano-composite layer on the substrate by magnetron sputtering, wherein the nano-composite layer comprises a number of metal oxide nitride layers and an equal number of Ce layers, and each metal oxide nitride layer alternating with a Ce layer, the outermost layer of the nano-composite layer is a metal oxide nitride layer; and

metal in the metal oxide nitride layer is a selected from a group of aluminum, titanium, silicon, chromium and zirconium.

11. The method of claim 10, wherein depositing the nano-composite layer on the substrate comprising depositing a metal oxide nitride layer on the substrate in a vacuum chamber of a magnetron sputtering coating machine, by evaporating a metal target selecting from a of aluminum target, titanium target, silicon target, chromium target and zirconium target in the vacuum chamber;

depositing a Ce layer on the metal oxide nitride layer by evaporating a cerium target in the vacuum chamber; and

alternatively and repeatedly deposit 6 to 30 metal oxide nitride layers and 6 to 30 Ce layers.

12. The method of claim 11, wherein during depositing a metal oxide nitride layer on the substrate, the substrate is retained in the vacuum chamber;

the temperature of the vacuum chamber is adjusted to about 50°

C. to 300°

C.;

pure argon is fed into the vacuum chamber at a flux of about 100 sccm to 300 sccm;

oxygen is fed into the vacuum chamber at a flux from about 40 sccm to about 80 sccm and nitrogen is fed into the vacuum chamber at a flux from about 40 sccm to about 80 sccm;

the metal target is evaporated using a power from 7 kw to 11 kw for a time from about 5 min to about 15 min, to deposit a metal oxide nitride layer on the substrate.

13. The method of claim 12, wherein during depositing a metal oxide nitride layer on the substrate, the substrate is retained in the vacuum chamber;

the temperature of the vacuum chamber is adjusted to about 50°

C. to 300°

C.;

pure argon is fed into the vacuum chamber at a flux of about 100 sccm to 300 sccm;

oxygen is fed into the vacuum chamber at a flux from about 10 sccm to about 20 sccm and nitrogen is fed into the vacuum chamber at a flux from about 10 sccm to about 20 sccm, and the flux of the nitrogen and the flux of the oxygen are each increased about 5 sccm to about 15 sccm every 15 minute;

the metal target is evaporated using a power from 7 kw to 11 kw for a time from about 5 min to about 15 min, to deposit a metal oxide nitride layer on the substrate.

14. The method of claim 13, wherein during the depositing a Ce layer on the metal oxide nitride layer, the substrate is retained in the vacuum chamber;

the temperature of the vacuum chamber is adjusted to about 50°

C. to 300°

C.;

pure argon is fed into the vacuum chamber at a flux of about 100 sccm to 300 sccm with oxygen and nitrogen stopped feeding into the vacuum chamber;

the cerium target is evaporated using a power from 7 kw to 11 kw for a time from about 5 min to about 15 min, to deposit a Ce layer on the metal oxide nitride layer.