LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20120080669A1
• Filed: 12/09/2011
• Published: 04/05/2012
• Est. Priority Date: 06/11/2002
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YAMAZAKI, Shunpei, Takayama, Toru
• Application Number:
  US13/315,312
• Publication Number:
  US 20120080669A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/874 including getter material or desiccant

Abstract

A light emitting element having an organic compound, which can be extended its longevity is provided. According to the present invention, there is provided a constitution in which, in order to protect a light emitting element from moisture, an inorganic insulating film 312a, a stress relaxation layer 312b having transparency and a hygroscopic property, and an inorganic insulating film 312c are repeatedly laminated over a cathode. The stress relaxation layer 312b having transparency and the hygroscopic property uses at least one film selected from the group consisting of a film comprising a same material as that of a layer 310, containing an organic compound, sandwiched between a cathode and an anode, a layer capable of being formed by vapor deposition, and a layer capable of being formed by coating.

Claims

1. A bottom emission light emitting device comprising:

a first substrate;

a light emitting element over the first substrate, the light emitting element comprising;

an anode over the first substrate;

an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and

a cathode over the electroluminescent layer;

a layer over the light emitting element, the layer including tris-8-quinolinolate aluminum complex; and

a second substrate over the layer,

wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.

2. The bottom emission light emitting device according to claim 1, further comprising a first inorganic insulating layer over the cathode.

3. The bottom emission light emitting device according to claim 1, further comprising a second inorganic insulating layer over the layer.

4. The bottom emission light emitting device according to claim 1, wherein a top surface of the cathode is in contact with the layer.

5. The bottom emission light emitting device according to claim 1, further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element.

6. The bottom emission light emitting device according to claim 1, wherein the layer is formed by vapor deposition.

7. The bottom emission light emitting device according to claim 1, wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating.

8. A semiconductor device comprising the bottom emission light emitting device of claim 1, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.

9. A bottom emission light emitting device comprising:

a first substrate;

a light emitting element over the first substrate, the light emitting element comprises;

an anode over the first substrate;

an electroluminescent layer over the anode, the electroluminescent layer includes an organic compound; and

a cathode over the electroluminescent layer;

a layer over the light emitting element, the layer includes the organic compound; and

a second substrate over the layer,

wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.

10. The bottom emission light emitting device according to claim 9, further comprising a first inorganic insulating layer over the cathode.

11. The bottom emission light emitting device according to claim 9, further comprising a second inorganic insulating layer over the layer.

12. The bottom emission light emitting device according to claim 9, wherein a top surface of the cathode is in contact with the layer.

13. The bottom emission light emitting device according to claim 9, wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate.

14. The bottom emission light emitting device according to claim 9, wherein the layer is formed by vapor deposition.

15. The bottom emission light emitting device according to claim 9, wherein the layer is a polymeric material layer containing the organic compound, obtained by coating.

16. The bottom emission light emitting device according to claim 9, wherein the organic compound is at least one material selected from a group consisting of 4,4′

-bisbiphenyl, bathocuproin, and 4,4′

,4″

-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine.

17. A semiconductor device comprising the bottom emission light emitting device of claim 9, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.

18. A bottom emission light emitting device comprising:

a first substrate;

a light emitting element over the first substrate, the light emitting element comprises;

an anode over the first substrate;

an electroluminescent layer over the anode, the electroluminescent layer includes tris-8-quinolinolate aluminum complex; and

a cathode over the electroluminescent layer;

a layer over the light emitting element, the layer includes tris-8-quinolinolate aluminum complex; and

a second substrate over the layer,

wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.

19. The bottom emission light emitting device according to claim 18, further comprising a first inorganic insulating layer over the cathode.

20. The bottom emission light emitting device according to claim 18, further comprising a second inorganic insulating layer over the layer.

21. The bottom emission light emitting device according to claim 18, wherein a top surface of the cathode is in contact with the layer.

22. The bottom emission light emitting device according to claim 18, wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate.

23. The bottom emission light emitting device according to claim 18, wherein the layer is formed by vapor deposition.

24. The bottom emission light emitting device according to claim 18, wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating.

25. A semiconductor device comprising the bottom emission light emitting device of claim 18, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.

26. A bottom emission light emitting device comprising:

a first substrate;

a light emitting element over the first substrate, the light emitting element comprising;

an anode over the first substrate;

an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and

a cathode over the electroluminescent layer;

a layer over the light emitting element, the layer including at least one material selected from a group consisting of 4,4′

-bisbiphenyl, bathocuproin, and 4,4′

,4″

-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, and

a second substrate over the layer,

wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.

27. The bottom emission light emitting device according to claim 26, further comprising a first inorganic insulating layer over the cathode.

28. The bottom emission light emitting device according to claim 26, further comprising a second inorganic insulating layer over the layer.

29. The bottom emission light emitting device according to claim 26, wherein a top surface of the cathode is in contact with the layer.

30. The bottom emission light emitting device according to claim 26, further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element.

31. The bottom emission light emitting device according to claim 26, wherein the layer is formed by vapor deposition.

32. The bottom emission light emitting device according to claim 26, wherein the layer is a polymeric material layer containing the one material selected from a group consisting of 4,4′

-bisbiphenyl, bathocuproin, and 4,4′

,4″

-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine, obtained by coating.

33. A semiconductor device comprising the bottom emission light emitting device of claim 26, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.

34. A bottom emission light emitting device comprising:

a first substrate;

a light emitting element over the first substrate, the light emitting element comprising;

an anode over the first substrate;

an electroluminescent layer over the anode, the electroluminescent layer including a first organic compound; and

a cathode over the electroluminescent layer; and

a layer over the light emitting element, the layer including tris-8-quinolinolate aluminum complex;

a space over the layer; and

a second substrate over the space,

wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.

35. The bottom emission light emitting device according to claim 34, further comprising a first inorganic insulating layer over the cathode.

36. The bottom emission light emitting device according to claim 34, further comprising a second inorganic insulating layer over the layer.

37. The bottom emission light emitting device according to claim 34, wherein a top surface of the cathode is in contact with the layer.

38. The bottom emission light emitting device according to claim 34, further comprising a TFT over the first substrate, wherein the TFT is electrically connected to the light emitting element.

39. The bottom emission light emitting device according to claim 34, wherein the layer is formed by vapor deposition.

40. The bottom emission light emitting device according to claim 34, wherein the layer is a polymeric material layer containing tris-8-quinolinolate aluminum complex, obtained by coating.

41. A semiconductor device comprising the bottom emission light emitting device of claim 34, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.

42. The bottom emission light emitting device according to claim 34, wherein the space is filled with an inert gas.

43. A bottom emission light emitting device comprising:

a first substrate;

a light emitting element over the first substrate, the light emitting element comprises;

an anode over the first substrate;

an electroluminescent layer over the anode, the electroluminescent layer includes an organic compound; and

a cathode over the electroluminescent layer;

a layer over the light emitting element, the layer includes the organic compound;

a space over the layer; and

a second substrate over the space,

wherein the first substrate and the anode are capable of transmitting light emitted by the electroluminescent layer.

44. The bottom emission light emitting device according to claim 43, further comprising a first inorganic insulating layer over the cathode.

45. The bottom emission light emitting device according to claim 43, further comprising a second inorganic insulating layer over the layer.

46. The bottom emission light emitting device according to claim 43, wherein a top surface of the cathode is in contact with the layer.

47. The bottom emission light emitting device according to claim 43, wherein the light emitting element and a TFT electrically connected to the light emitting element are provided over the first substrate.

48. The bottom emission light emitting device according to claim 43, wherein the layer is formed by vapor deposition.

49. The bottom emission light emitting device according to claim 43, wherein the layer is a polymeric material layer containing the organic compound, obtained by coating.

50. The bottom emission light emitting device according to claim 43, wherein the organic compound is at least one material selected from a group consisting of 4,4′

-bisbiphenyl, bathocuproin, and 4,4′

,4″

-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine.

51. A semiconductor device comprising the bottom emission light emitting device of claim 43, wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a display, a car navigation system, a personal computer, and a portable information terminal.

52. The bottom emission light emitting device according to claim 43, wherein the space is filled with an inert gas.