Semiconductor Devices and Methods of Manufacturing Thereof
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- forming a first porous semiconductor layer over a top surface of a substrate;
forming a first epitaxial layer over the first porous semiconductor layer; and
forming circuitry within and over the first epitaxial layer, wherein the circuitry is formed without completely oxidizing the first epitaxial layer.
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Abstract
In one embodiment, a method of forming a semiconductor device includes forming a first porous semiconductor layer over a top surface of a substrate. A first epitaxial layer is formed over the first porous semiconductor layer. A circuitry is formed within and over the first epitaxial layer. The circuitry is formed without completely oxidizing the first epitaxial layer.
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Citations
51 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming a first porous semiconductor layer over a top surface of a substrate; forming a first epitaxial layer over the first porous semiconductor layer; and forming circuitry within and over the first epitaxial layer, wherein the circuitry is formed without completely oxidizing the first epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a semiconductor, device, the method comprising:
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forming a first porous semiconductor layer over a top surface of a substrate; forming a first epitaxial layer over the first porous semiconductor layer; forming circuitry over the first epitaxial layer; and thinning the substrate from a back surface to form a thinned substrate, wherein the thinning removes the first porous semiconductor layer. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of forming a semiconductor device, the method comprising:
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forming a buffer semiconductor layer having pores or openings over a top surface of a substrate; and forming a compound semiconductor layer over the buffer semiconductor layer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A semiconductor device comprising:
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a first epitaxial layer disposed within a substrate; circuitry disposed within and over the first epitaxial layer, the circuitry disposed proximate to a top surface of the substrate; and a first porous layer disposed on a back surface of a substrate, the back surface being opposite to the top surface, wherein the first porous layer comprises a metal silicide. - View Dependent Claims (40, 41)
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42. A semiconductor device comprising:
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a buffer semiconductor layer having pores or openings disposed over a top surface of a substrate; and a compound semiconductor layer disposed over the buffer semiconductor layer. - View Dependent Claims (43, 44, 45, 46, 47, 48, 49, 50, 51)
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Specification