METHOD OF MANUFACTURING A SEMICONDUCTOR COMPONENT AND STRUCTURE

• US 20120080803A1
• Filed: 10/01/2010
• Published: 04/05/2012
• Est. Priority Date: 10/01/2010
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: Holland, Phillip, Sharma, Umesh, Liou, Der Min, Marreiro, David D., Shastri, Sudhama C., Liu, Rong
• Granted Patent: US 8,766,401 B2
• Time in Patent Office: Days
• US Class Current: 257/774
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53252 Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor component and methods for manufacturing the semiconductor component that includes a three dimensional helically shaped common mode choke. In accordance with embodiments, a transient voltage suppression device may be coupled to the monolithically integrated common mode choke.

Claims

1. A semiconductor component, comprising:

a first electrically conductive structure having first and second ends and a body region between the first and second ends;

a second electrically conductive structure having first and second ends and a body region between the first and second ends, the second electrically conductive structure vertically spaced apart from the first electrically conductive structure and a first portion of the body region of the second electrically conductive structure over a first portion of the body region of the first electrically conductive structure;

a first bond wire having first and second ends, wherein the first end of the first bond wire is electrically coupled to the first end of the first electrically conductive structure; and

a second bond wire having first and second ends, wherein the first end of the second bond wire is electrically coupled to the first end of the second electrically conductive structure.

2. The semiconductor component of claim 1, wherein the first ends of the first and second electrically conductive structures are adjacent to each other.

3. The semiconductor component of claim 1, further including a third electrically conductive structure having first and second ends and a body region between the first and second ends, wherein a second end of the first bond wire is electrically coupled to the second end of the third electrically conductive structure.

4. The semiconductor component of claim 3, further including a fourth electrically conductive structure having first and second ends and a body region between the first and second ends, the fourth electrically conductive structure vertically spaced apart from the first electrically conductive structure and a second portion of the body region of the fourth electrically conductive structure over a second portion of the body region of the first electrically conductive structure, the second end of the third electrically conductive structure laterally between the second ends of the second and the fourth electrically conductive structure, and the second end of the second bond wire electrically coupled to the second end of the fourth electrically conductive structure.

5. The semiconductor component of claim 4, further including:

a fifth electrically conductive structure having first and second ends and a body region between the first and second ends, the first end of the fifth electrically conductive structure between the first ends of the second and fourth electrically conductive structures;

a third bond wire having first and second ends, wherein the first end of the third bond wire is electrically coupled to the first end of the fifth electrically conductive structure and the second end of the third bond wire is electrically coupled to the second end of the first electrically conductive structure; and

a fourth bond wire having first and second ends, wherein the first end of the fourth bond wire is electrically coupled to the first end of the fourth electrically conductive structure.

6. The semiconductor component of claim 5, further including:

a sixth electrically conductive structure having first and second ends and a body region between the first and second ends, the first end of the sixth electrically conductive structure between the second ends of the first and the fifth electrically conductive structures and the second end of the fourth bond wire electrically coupled to the second end of the sixth electrically conductive structure;

a fifth bond wire having first and second ends, the second end of the fifth bond wire electrically coupled to the second end of the fifth electrically conductive structure;

a seventh electrically conductive structure having first and second ends, the first end of the seventh electrically conductive structure laterally between the first ends of the fourth and sixth electrically conductive structures;

a sixth bond wire having first and second ends, the first end electrically coupled to the first end of the sixth electrically conductive structure;

an eighth electrically conductive structure having first and second ends, the second end laterally between the second ends of the fifth and seventh electrically conductive structures, and the second end of the sixth bond wire electrically coupled to the second end of the eighth electrically conductive structure;

a seventh bond wire having first and second ends, the second end electrically coupled to the second end of the seventh electrically conductive structure; and

an eighth wire bond having first and second ends, the first end electrically coupled to the second end of the second electrically conductive structure.

7. The semiconductor component of claim 6, wherein the first, third, fifth, and seventh electrically conductive structures comprise electrically conductive strips formed from a first common metallization system and the second, fourth, sixth, and eighth electrically conductive structures comprise electrically conductive strips formed from a second common metallization system.

8. The semiconductor component of claim 7, further including first and second contacts, wherein the first end of the eighth wire bond is electrically coupled to the first contact and the first end of the seventh wire bond is electrically coupled to the second contact, and wherein the first end of the third electrically conductive structure serves as a terminal, the first contact serves as a second terminal, the second contact serves as a third terminal, and the first end of the eighth electrically conductive structure serves as a fourth terminal.

9. A semiconductor component, comprising:

a first coil having a first set of coil elements comprising a first set of electrically conductive strips and a second set of coil elements comprising a first set of bond wires; and

a second coil having a second set of coil elements comprising a second set of electrically conductive strips and a second set of coil elements comprising a second set of bond wires.

10. The semiconductor component of claim 9, wherein each electrically conductive strip of the first set of electrically conductive strips has first and second ends, the second end of a first electrically conductive strip of the first set of electrically conductive strips coupled the first end of a second electrically conductive strip of the first set of electrically conductive strips via a first bond wire of the first set of bond wires and the second end of the second electrically conductive strip of the first set of electrically conductive strips coupled to the first end of a third electrically conductive strip of the first set of electrically conductive strips by a second bond wire of the first set of bond wires, and wherein each electrically conductive strip of the second set of electrically conductive strips has first and second ends, the second end of a first electrically conductive strip of the second set of electrically conductive strips coupled to the first end of a second electrically conductive strip of the second set of electrically conductive strips by a first bond wire of the second set of bond wires and the second end of the second electrically conductive strips of the second set of electrically conductive strips coupled to the first end of a third electrically conductive strip of the second set of electrically conductive strips by a second bond wire of the second set of bond wires.

11. The semiconductor component of claim 10, wherein the first set of electrically conductive strips includes a fourth electrically conductive strip having a first end coupled to the second end of the third electrically conductive strip of the first set of electrically conductive strips by a third bond wire of the first set of bond wires, and wherein the second set of electrically conductive strips includes a fourth electrically conductive strip having a first end coupled to the second end of the third electrically conductive strip of the second set of electrically conductive strips by a third bond wire of the second set of bond wires.

12. The semiconductor component of claim 11, wherein the first set of bond wires includes a fourth bond wire coupled to the second end of the fourth electrically conductive strip of the first set of electrically conductive strips and the second set of bond wires includes a fourth bond wire coupled to the second end of the first electrically conductive strip of the second set of electrically conductive strips.

13. A semiconductor component, comprising:

a semiconductor material having a major surface;

a first metallization system formed over the semiconductor material, the first metallization system comprising at least one electrical interconnect structure;

a first dielectric structure formed over the first metallization system;

a second metallization system formed over the first dielectric structure, the second metallization comprising a first set of coils;

a second dielectric structure formed over the second metallization system; and

a third metallization system formed over the second dielectric structure, the third metallization system comprising a second set of coils.

14. The semiconductor component of claim 13, wherein the first metallization system and second metallization systems comprise electroplated metals.

15. The semiconductor component of claim 13, wherein the second and third dielectric structures comprise polyimide.

16. The semiconductor component of claim 15, further including a third dielectric structure formed over the second metallization system.

17. A method for manufacturing a semiconductor component, comprising:

providing a semiconductor material having a major surface;

forming a first metallization system over the semiconductor material;

forming a first dielectric structure over the first metallization system;

forming a first template over the first dielectric structure, the template having openings that expose portions of the first dielectric structure;

forming a second metallization system on the exposed portions of the first dielectric structure;

forming a second dielectric structure over the second metallization system;

forming a second template over the second dielectric structure, the template having openings that expose portions of the second dielectric structure; and

forming a third metallization system on the exposed portions of the second dielectric structure.

18. The method of claim 17, wherein forming the first template comprises forming a first photoresist structure over the first dielectric structure, the first photoresist structure having openings that expose the portions of the first dielectric structure.

19. The method of claim 18, wherein forming the second metallization system includes forming a first seed layer on the exposed portions of the first dielectric structure and electroplating a first electrically conductive material on the first seed layer.

20. The method of claim 19, wherein forming the second template comprises forming a second photoresist structure over the second dielectric structure, the second photoresist structure having openings that expose the portions of the second dielectric structure.

21. The method of claim 20, wherein forming the third metallization system includes forming a second seed layer on the exposed portions of the second dielectric structure and electroplating a second electrically conductive material on the second seed layer.

22. The method of claim 17, wherein forming the first dielectric structure includes forming a first layer of polyimide and forming the second dielectric structure includes forming a second layer of polyimide.