Method for producing group III nitride semiconductor light-emitting device
First Claim
1. A method for producing a Group III nitride semiconductor light-emitting device comprising an n-type layer, a light-emitting layer, and a p-type layer, which are made of Group III nitride semiconductor, sequentially deposited on a buffer layer which is deposited on a sapphire substrate having a c-plane main surface, said main surface having a texture structure, the method comprising:
- forming the texture on the main surface of the sapphire substrate so as to have a depth of 1 μ
m to 2 μ
m;
forming a buried layer of Group III nitride semiconductor on the buffer layer, to flatten a top surface by burying the texture, at a temperature which is lower by 20°
C. to 80°
C. than that when the n-type layer is formed; and
forming the n-type layer on the buried layer at a temperature of 1000°
C. to 1200°
C.
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Abstract
A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 μm to 2 μm and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer.
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Citations
13 Claims
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1. A method for producing a Group III nitride semiconductor light-emitting device comprising an n-type layer, a light-emitting layer, and a p-type layer, which are made of Group III nitride semiconductor, sequentially deposited on a buffer layer which is deposited on a sapphire substrate having a c-plane main surface, said main surface having a texture structure, the method comprising:
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forming the texture on the main surface of the sapphire substrate so as to have a depth of 1 μ
m to 2 μ
m;forming a buried layer of Group III nitride semiconductor on the buffer layer, to flatten a top surface by burying the texture, at a temperature which is lower by 20°
C. to 80°
C. than that when the n-type layer is formed; andforming the n-type layer on the buried layer at a temperature of 1000°
C. to 1200°
C. - View Dependent Claims (2, 3, 4, 5)
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6. A method for producing a Group III nitride semiconductor light-emitting device comprising an n-type layer, a light-emitting layer, and a p-type layer, which are made of Group III nitride semiconductor, sequentially deposited on a buffer layer which is deposited on a sapphire substrate having a c-plane main surface, said main surface having a texture structure, the method comprising:
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forming the texture on the sapphire substrate so as to have a side surface inclined by 40°
to 80° and
a depth of 1 μ
m to 2 μ
m;forming a preventing layer of Group III nitride semiconductor on the buffer layer to prevent mass transport of the buffer layer, at a temperature of 600°
C. to 1050°
C. so as to cover the entire top surface of the buffer layer; andforming the n-type layer on the preventing layer at a temperature of 1050°
C. to 1200°
C. - View Dependent Claims (7, 8, 9)
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10. A method for producing a Group III nitride semiconductor light-emitting device comprising layers which are made of Group III nitride semiconductor, sequentially deposited on a buffer layer which is deposited on a sapphire substrate having a c-plane main surface, said main surface having a texture structure, the method comprising:
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forming the texture on the sapphire substrate so as to have a depth of 1.2 μ
m to 2.5 μ
m and a side surface inclined by 40°
to 80° and
;forming the buffer layer of Group III nitride semiconductor containing Al. - View Dependent Claims (11, 12, 13)
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Specification