Transistors, Methods Of Manufacturing The Same, And Electronic Devices Including Transistors

• US 20120085999A1
• Filed: 05/03/2011
• Published: 04/12/2012
• Est. Priority Date: 10/12/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Song, I-hun, Jeon, Sang-hun, Park, Sung-ho, Huaxiang, Yin
• Granted Patent: US 9,117,727 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/14681 Bipolar transistor imagers
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

Example embodiments disclose transistors, methods of manufacturing the same, and electronic devices including transistors. An active layer of a transistor may include a plurality of material layers (oxide layers) with different energy band gaps. The active layer may include a channel layer and a photo sensing layer. The photo sensing layer may have a single-layered or multi-layered structure. When the photo sensing layer has a multi-layered structure, the photo sensing layer may include a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer. The first layer and the second layer may be alternately stacked one or more times.

Claims

1. A transistor comprising:

an active layer including an oxide semiconductor;

a source and a drain contacting two ends of the active layer, respectively;

a gate corresponding to the active layer; and

a gate insulating layer between the active layer and the gate,

wherein the active layer includes a first layer and a second layer that are sequentially stacked from a side of the gate, and the second layer includes a material having a smaller energy band gap than the first layer.

2. The transistor of claim 1, wherein the first layer comprises a ZnO-based oxide.

3. The transistor of claim 2, wherein the ZnO-based oxide comprises at least one of hafnium (Hf), yttrium (Y), tantalum (Ta), zirconium (Zr), titanium (Ti), copper (Cu), nickel (Ni), chromium (Cr), indium (In), gallium (Ga), aluminum (Al), tin (Sn), and magnesium (Mg).

4. The transistor of claim 3, wherein the first layer comprises HfInZnO or GaInZnO.

5. The transistor of claim 1, wherein the second layer has a single-layered structure or a multi-layered structure.

6. The transistor of claim 1, wherein the second layer comprises a first material layer and a second material layer that are sequentially stacked on a surface of the first layer.

7. The transistor of claim 6, wherein an energy band gap of the first material layer is smaller than an energy band gap of the second material layer.

8. The transistor of claim 6, wherein the first material layer comprises InZnO or TiOx.

9. The transistor of claim 6, wherein an energy band gap of the second material layer is smaller than an energy band gap of the first layer.

10. The transistor of claim 6, wherein an oxygen content of the second material layer is greater than an oxygen content of the first layer.

11. The transistor of claim 6, wherein an electrical resistance of the second material layer is greater than an electrical resistance of the first layer.

12. The transistor of claim 6, wherein the second material layer and first layer comprise a ZnO-based oxide.

13. The transistor of claim 6, wherein the first material layer and the second material are alternately stacked at least twice.

14. The transistor of claim 1, wherein the gate is below the active layer.

15. The transistor of claim 1, wherein the gate is above the active layer.

16. An electronic device comprising:

the transistor of claim 1.

17. A photo sensing circuit comprising:

the transistor of claim 1.

18. The photo sensing circuit of claim 17, further comprising:

a switching device connected to the transistor.

19. A transistor comprising:

an active layer including an oxide semiconductor;

a source and a drain contacting two ends of the active layer, respectively;

a gate corresponding to the active layer; and

a gate insulating layer between the active layer and the gate,

wherein the active layer includes a channel layer and a photo sensing layer, the photo sensing layer has a higher photosensitivity than the channel layer, and the channel layer is closer to the gate than the photo sensing layer.

20. The transistor of claim 19, wherein the photo sensing layer comprises a material with a smaller energy band gap than the channel layer.

21. The transistor of claim 19, wherein the photo sensing layer comprises a first material layer and a second material layer that are sequentially stacked on a surface of the channel layer.

22. The transistor of claim 21, wherein an energy band gap of the first material layer is smaller than energy band gaps of the second material layer and the channel layer.

23. The transistor of claim 21, wherein an energy band gap of the second material layer is smaller than an energy band gap of the channel layer.

24. The transistor of claim 21, wherein the first material layer and the second material are alternately stacked at least twice.