HETEROGENEOUS SUBSTRATE, NITRIDE-BASED SEMICONDUCTOR DEVICE USING SAME, AND MANUFACTURING METHOD THEREOF
First Claim
1. A heterogeneous substrate on which a nitride is deposited, comprising:
- a base substrate having one of a non-polar plane and a semi-polar plane;
a nitride-based nucleation layer formed on the plane of the base substrate;
a first buffer layer formed on the nucleation layer such that the first buffer layer is grown faster in a vertical direction than in a lateral direction;
a lateral growth layer formed on the first buffer layer such that the lateral growth layer is grown faster in the lateral direction than in the vertical direction; and
a second buffer layer grown on the lateral growth layer.
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Abstract
Provided are a heterogeneous substrate, a nitride-based semiconductor device using the same, and a manufacturing method thereof to form a high-quality non-polar or semi-polar nitride layer on a non-polar or semi-polar plane of the heterogeneous substrate by adjusting a crystal growth mode. A base substrate having one of a non-polar plane and a semi-polar plane is prepared, and a nitride-based nucleation layer is formed on the plane of the base substrate. A first buffer layer is grown faster in the vertical direction than in the lateral direction on the nucleation layer. A lateral growth layer is grown faster in the lateral direction than in the vertical direction on the first buffer layer. A second buffer layer is formed on the lateral growth layer. A silicon nitride layer having a plurality of holes may be formed between the lateral growth layer on the first buffer layer and the second buffer layer.
21 Citations
29 Claims
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1. A heterogeneous substrate on which a nitride is deposited, comprising:
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a base substrate having one of a non-polar plane and a semi-polar plane; a nitride-based nucleation layer formed on the plane of the base substrate; a first buffer layer formed on the nucleation layer such that the first buffer layer is grown faster in a vertical direction than in a lateral direction; a lateral growth layer formed on the first buffer layer such that the lateral growth layer is grown faster in the lateral direction than in the vertical direction; and a second buffer layer grown on the lateral growth layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A nitride-based semiconductor device comprising:
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a heterogeneous substrate on which a nitride is deposited, the heterogeneous substrate including; a base substrate having one of a non-polar plane and a semi-polar plane; a nitride-based nucleation layer formed on the plane of the base substrate; a first buffer layer formed on the nucleation layer such that the first buffer layer is grown faster in a vertical direction than in a lateral direction; a lateral growth layer formed on the first buffer layer such that the lateral growth layer is grown faster in the lateral direction than in the vertical direction; and a second buffer layer grown on the lateral growth layer; an n-type or p-type first nitride layer formed on the second buffer layer of the heterogeneous substrate; an active layer formed on the first nitride layer; and a second nitride layer formed on the active layer and having a conductivity type opposite to that of the first nitride layer. - View Dependent Claims (16, 17, 18)
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19. A method for manufacturing a heterogeneous substrate on which a nitride is deposited, the method comprising the steps of:
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preparing a base substrate having one of a non-polar plane and a semi-polar plane; forming a nitride-based nucleation layer on the plane of the base substrate; forming a first buffer layer on the nucleation layer such that the first buffer layer is grown faster in a vertical direction than in a lateral direction; forming a lateral growth layer on the first buffer layer such that the lateral growth layer is grown faster in the lateral direction than in the vertical direction; and growing a second buffer layer on the lateral growth layer. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method for manufacturing a nitride-based semiconductor device, the method comprising the steps of:
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manufacturing a heterogeneous substrate on which a nitride is deposited, including the steps of; preparing a base substrate having one of a non-polar plane and a semi-polar plane; forming a nitride-based nucleation layer on the plane of the base substrate; forming a first buffer layer on the nucleation layer such that the first buffer layer is grown faster in a vertical direction than in a lateral direction; forming a lateral growth layer on the first buffer layer such that the lateral growth layer is grown faster in the lateral direction than in the vertical direction; and growing a second buffer layer on the lateral growth layer; forming an n-type or p-type first nitride layer on the second buffer layer of the heterogeneous substrate; forming an active layer on the first nitride layer; and forming a second nitride layer having a conductivity type opposite to that of the first nitride layer on the active layer. - View Dependent Claims (27, 28, 29)
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Specification