LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME

• US 20120086040A1
• Filed: 06/10/2010
• Published: 04/12/2012
• Est. Priority Date: 06/23/2009
• Status: Abandoned Application

• Current Assignee: Korea Photonics Technology Institute
• Original Assignee: Korea Photonics Technology Institute
• Inventors: Kim, Jae-Pil, Kim, Sang-Mook, Lee, Kwang-Cheol, Song, Sang-Bin
• Application Number:
  US13/376,714
• Publication Number:
  US 20120086040A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Abstract

Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

Claims

1. A light-emitting diode comprising:

a base structure;

a light-emitting diode chip disposed on the base structure; and

a wavelength conversion material layer formed on the light-emitting diode chip such that the area adjacent to the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side of the light-emitting diode chip.

2. The light-emitting diode of claim 1, wherein the wavelength conversion material layer has a thickness profile proportional to the amount of light emitted from the light-emitting diode chip.

3. The light-emitting diode of claim 2, wherein the wavelength conversion material layer comprises a light-transmitting photocurable material and a wavelength conversion material.

4. The light-emitting diode of claim 3, wherein the light-transmitting photocurable material comprises one selected from the group consisting of silicone resin, epoxy resin, acrylic resin, urethane resin, photoresist, and glass.

5. The light-emitting diode of claim 3, wherein the wavelength conversion material has at least one wavelength range selected from the group consisting of yellow, red, green, and blue.

6. The light-emitting diode of claim 3, wherein the wavelength conversion material comprises at least one selected from the group consisting of a fluorescent material, a dye, and a pigment.

7. The light-emitting diode of claim 1, wherein the base structure is selected from the group consisting of a package lead frame, a package pre-mold frame, a sub-mount substrate, and a light-emitting diode wafer.

8. The light-emitting diode of claim 7, wherein the light-emitting diode chip is a vertical light-emitting diode chip and is disposed in or on the light-emitting diode wafer.

9. The light-emitting diode of claim 1, wherein the base structure comprises a reflective cup.

10. The light-emitting diode of claim 1, further comprising a protective layer disposed between the light-emitting diode chip and the wavelength conversion material layer, wherein the protective layer encapsulates the light-emitting diode chip.

11. The light-emitting diode of claim 10, wherein the protective layer has a dome shape that covers the light-emitting diode chip or a conformal shape that covers the light-emitting diode chip and has a uniform thickness.

12. The light-emitting diode of claim 10, wherein the protective layer comprises one selected from the group consisting of glass and light-transmitting resin.

13. The light-emitting diode of claim 1, wherein the light-emitting diode chip is a device that emits light selected from the group consisting of blue light and ultraviolet light.

14. The light-emitting diode of claim 1, further comprising a protective layer disposed on the wavelength conversion material layer.

15. The light-emitting diode of claim 14, wherein the protective layer comprises one selected from the group consisting of glass and light-transmitting resin.

16. A method for fabricating a light-emitting diode, the method comprising the steps of:

disposing a light-emitting diode chip on a base structure; and

forming a wavelength conversion material layer on the light-emitting diode chip,

wherein the wavelength conversion material layer comprises a light-transmitting photocurable material,

wherein the wavelength conversion material layer is formed such that the area adjacent to the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side of the light-emitting diode chip.

17. The method of claim 16, wherein the step of forming the wavelength conversion material layer comprises the steps of:

coating a mixture containing a wavelength conversion material and a light-transmitting photocurable material on the light-emitting diode chip;

curing the mixture by exposing the mixture to light emitted by applying an electric field to the light-emitting diode chip; and

removing the residual uncured mixture.

18. The method of claim 17, wherein the mixture is coated by blade coating, screen coating, dip coating, dotting, spin coating, spray, or inkjet printing.

19. The method of claim 16, further comprising the step of forming a protective layer between the base structure and the wavelength conversion material layer.

20. A method for fabricating a light-emitting diode, the method comprising the steps of:

forming a plurality of light-emitting diode chips on a light-emitting diode wafer divided into a plurality of cell areas;

coating a mixture containing a wavelength conversion material and a light-transmitting photocurable material on the light-emitting diode chips;

curing the mixture by exposing the mixture to light emitted by applying an electric field to the light-emitting diode chips;

forming a wavelength conversion material layer by removing the residual uncured mixture; and

cutting the light-emitting diode wafer into a plurality of light-emitting diode cells.

21. The method of claim 20, wherein the cell areas of the light-emitting diode wafer are defined by a plurality of cutting lines and a separation pattern.

22. The method of claim 21, wherein the residual uncured mixture is removed by development and the separation pattern is also removed by development.

23. The method of claim 21, further comprising the step of, before the step of coating the mixture containing a wavelength conversion material and a light-transmitting photocurable material, forming a protective layer for encapsulating the light-emitting diode chips.