SEMICONDUCTOR PACKAGE HAVING AN IMPROVED CONNECTION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

• US 20120088336A1
• Filed: 12/19/2011
• Published: 04/12/2012
• Est. Priority Date: 07/27/2007
• Status: Abandoned Application

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: KANG, Tae Min
• Application Number:
  US13/329,937
• Publication Number:
  US 20120088336A1
• Time in Patent Office: Days
• US Class Current: 438/121
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0558 being stacked
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/81191 wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/83851 being an anisotropic conductive adhesive
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/0781 being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/15311 being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15312 being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/19041 being a capacitor
• CPC Class Codes: H01L 2924/19043 being a resistor
• CPC Class Codes: H05K 2201/10674 : Flip chip
• CPC Class Codes: H05K 2203/105 : Using an electrical field; Special methods of applying an electric potential electroplating H05K2203/0723
• CPC Class Codes: H05K 3/323 : by applying an anisotropic conductive adhesive layer over an array of pads

Abstract

A semiconductor package having an improved connection structure and a method for manufacturing the same is described. The semiconductor package includes a substrate having a substrate body, connection pads that are located on one surface of the substrate body, and ball lands that are located on the other surface of the substrate body opposite the one surface. The ball lands are electrically connected to the connection pads. A semiconductor chip having bumps that are formed to correspond to the connection pads is connected to the substrate. An anisotropic conductive member having an insulation element is interposed between the substrate and the semiconductor chip to connect the substrate and the semiconductor chip. Electrically flowable conductive particles within the insulation element flow in the insulation element according to applied electric fields so as to arrange the electrically flowable conductive particles between the connection pads and the bumps.

Claims

1. A method for manufacturing a semiconductor package, comprising the steps of:

preparing a substrate having a substrate body, connection pads located on a first surface of the substrate body, and ball lands located on a second surface of the substrate body opposite the first surface that are electrically connected with the connection pads;

locating an anisotropic conductive member on the first surface of the substrate, the anisotropic conductive material having electrically flowable conductive particles and an insulation element;

applying electric fields to the electrically flowable conductive particles through the connection pads to move the electrically flowable conductive particles towards the connection pads within the insulation element in order to rearrange the electrically flowable conductive particles; and

electrically connecting bumps of a semiconductor chip to the connection pads using the electrically flowable conductive particles that are rearranged between the connection pads and the bumps.

2. The method according to claim 1, wherein the electrically flowable conductive particles comprise a first density at the connection pads and a second density in an area not at the connection pads,

wherein the second density is lower than the first density.

3. The method according to claim 1, wherein in the step of applying electric fields and rearranging the electrically flowable conductive particles, heat is applied to the anisotropic conductive member.

4. The method according to claim 1, wherein the electrically flowable conductive particles comprise first polarity parts having a first polarity and/or second polarity parts having a second polarity opposite the first polarity.

5. The method according to claim 4, wherein one of a first power having the first polarity or a second power having the second polarity that is opposite the first polarity is applied to each of the connection pads.

6. The method according to claim 4, wherein the first power is supplied to even-numbered connection pads and the second power is applied to odd-numbered connection pads.