INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES

• US 20120088356A1
• Filed: 09/07/2011
• Published: 04/12/2012
• Est. Priority Date: 09/14/2010
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: HILKENE, MARTIN A., RAMAMURTHY, SUNDAR, SANTHANAM, KARTIK, SCOTNEY-CASTLE, MATTHEW D., PORSHNEV, PETER I., SRINIVASAN, SWAMINATHAN
• Application Number:
  US13/227,034
• Publication Number:
  US 20120088356A1
• Time in Patent Office: Days
• US Class Current: 438/530
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process

Abstract

An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.

Claims

1. An integrated platform for processing substrates, comprising:

a vacuum substrate transfer chamber;

a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate;

a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and

a controller configured to control the integrated platform to perform doping processes in the doping chamber and dopant activation processes in the dopant activation chamber and to transfer the substrate from the doping chamber to the dopant activation chamber using the vacuum substrate transfer chamber, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising;

doping a substrate with one or more dopant elements in the doping chamber;

transferring the substrate under vacuum to the dopant activation chamber; and

annealing the substrate in the dopant activation chamber to activate the dopant elements.

2. The integrated platform of claim 1, further comprising:

a mask removal chamber coupled to the vacuum substrate transfer chamber, the mask removal chamber configured to remove a mask layer deposited on the substrate.

3. The integrated platform of claim 2, wherein the controller is further configured to transfer the substrate from the doping chamber to the mask removal chamber and from the mask removal chamber to the dopant activation chamber using the vacuum substrate transfer chamber.

4. The integrated platform of claim 2, wherein the instructions of the computer readable media further cause the integrated platform to transfer the substrate under vacuum to the mask removal chamber to remove the patterned mask from the substrate after doping the substrate and prior to annealing the substrate.

5. The integrated platform of claim 1, further comprising:

a second doping chamber coupled to the vacuum substrate transfer chamber; and

a second dopant activation chamber coupled to the vacuum substrate transfer chamber.

6. The integrated platform of claim 1, further comprising:

a second doping chamber coupled to the vacuum substrate transfer chamber; and

a mask removal chamber coupled to the vacuum substrate transfer chamber, the mask removal chamber configured to remove a mask layer deposited on the substrate.

7. The integrated platform of claim 1, further comprising:

one or more loadlock chambers coupled to the vacuum substrate transfer chamber.

8. The integrated platform of claim 1, further comprising:

a pre-clean chamber coupled to the vacuum substrate transfer chamber to clean the substrate prior to implanting or depositing the dopant elements in or on the surface of the substrate.

9. The integrated platform of claim 8, wherein the instructions of the computer readable media further cause the integrated platform to transfer the substrate under vacuum to the pre-clean chamber to pre-clean the substrate to remove at least one of contaminants or an oxide layer from a surface of the substrate prior to doping the substrate and prior to annealing the substrate.

10. A method of processing a substrate, comprising:

doping a substrate in a doping chamber with one or more dopant elements;

transferring the substrate under vacuum from the doping chamber to a dopant activation chamber; and

annealing the substrate to activate the dopant elements.

11. The method of claim 10, wherein annealing the substrate comprises heating the substrate to a temperature of about 600 to about 1300 degrees Celsius.

12. The method of claim 10, wherein the substrate further comprises a patterned mask disposed atop the substrate to define regions where the substrate is to be doped, and further comprising:

transferring the substrate under vacuum to a mask removal chamber after doping the substrate and prior to annealing the substrate;

removing the patterned mask from the substrate; and

after removing the patterned mask from the substrate, transferring the substrate under vacuum from the mask removal chamber to the dopant activation chamber.

13. The method of claim 12, wherein removing the patterned mask comprises exposing the substrate to a plasma formed from one of oxygen (O₂), nitrogen trifluoride (NF₃), carbon tetrafluoride (CF₄), hydrogen (H₂), or nitrogen (N₂) gas.

14. The method of claim 12, further comprising:

transferring the substrate under vacuum to a pre-clean chamber prior to doping the substrate and prior to annealing the substrate; and

pre-cleaning the substrate to remove at least one of contaminants or an oxide layer from a surface of the substrate.

15. The method of claim 14, wherein pre-cleaning the substrate comprises:

exposing the substrate to a plasma formed from a fluorine containing precursor and a hydrogen containing precursor to form a solid byproduct atop a surface of the substrate; and

flowing a gas across the surface of the substrate to remove the solid byproduct.

16. A computer readable medium having instructions stored thereon that, when executed, cause the integrated platform to perform a method, the method comprising:

doping a substrate in a doping chamber with one or more dopant elements;

transferring the substrate under vacuum from the doping chamber to a dopant activation chamber; and

annealing the substrate to activate the dopant elements.

17. The computer readable medium of claim 16, wherein the method further comprises:

transferring the substrate under vacuum from the doping chamber to a mask removal chamber after doping the substrate and prior to annealing the substrate;

removing a patterned mask from the substrate, wherein the patterned mask is disposed atop the substrate to define regions where the substrate is to be doped; and

then transferring the substrate under vacuum from the mask removal chamber to the dopant activation chamber.

18. The computer readable medium of claim 17, wherein removing the patterned mask from the substrate comprises exposing the substrate to a plasma formed from one of oxygen (O₂), nitrogen trifluoride (NF₃), carbon tetrafluoride (CF₄), hydrogen (H₂), or nitrogen (N₂) gas.

19. The computer readable medium of claim 16, wherein the method further comprises:

transferring the substrate under vacuum to a pre-clean chamber prior to doping the substrate and prior to annealing the substrate; and

pre-cleaning the substrate to remove at least one of contaminants or an oxide layer from a surface of the substrate.

20. The computer readable medium of claim 19, wherein pre-cleaning the substrate comprises:

exposing the substrate to a plasma formed from a fluorine containing precursor and a hydrogen containing precursor to form a solid byproduct atop a surface of the substrate; and

flowing a gas across the surface of the substrate to remove the solid byproduct.