Atomic Layer Deposition Of Photoresist Materials And Hard Mask Precursors
First Claim
Patent Images
1. A method for forming a radiation sensitive photoresist on a substrate comprising:
- exposing a substrate sequentially to alternating pulses of a first precursor containing substituents with cross-linkable moieties and a reactant selected from ozone, H2O, H2O2, NH3, reactive oxygen, reactive nitrogen, and reactive hydrogen and a second precursor containing reactive, moieties cross-linkable with the substituents in the first precursor to form a deposited layer such that reactive, cross-linkable moieties present in the first precursor and second precursor in the deposited layer remain partially unreacted and soluble to developer solution; and
selectively exposing portions of the deposited layer to radiation selected from EUV, far UV, X-ray and e-beam to create a pattern in which exposed portions of the deposited layer contain cross-linked moieties that form a film on the substrate that is less soluble than unexposed portions of the deposited layer.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e.g., silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.
-
Citations
34 Claims
-
1. A method for forming a radiation sensitive photoresist on a substrate comprising:
-
exposing a substrate sequentially to alternating pulses of a first precursor containing substituents with cross-linkable moieties and a reactant selected from ozone, H2O, H2O2, NH3, reactive oxygen, reactive nitrogen, and reactive hydrogen and a second precursor containing reactive, moieties cross-linkable with the substituents in the first precursor to form a deposited layer such that reactive, cross-linkable moieties present in the first precursor and second precursor in the deposited layer remain partially unreacted and soluble to developer solution; and selectively exposing portions of the deposited layer to radiation selected from EUV, far UV, X-ray and e-beam to create a pattern in which exposed portions of the deposited layer contain cross-linked moieties that form a film on the substrate that is less soluble than unexposed portions of the deposited layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
-
16. A method for forming a patterned photoresist on a substrate comprising:
-
exposing a substrate sequentially to alternating pulses of a Si—
H containing precursor and a silicon-containing precursor containing cross-linkable moieties by atomic layer deposition to form a deposited layer on the substrate; andselectively exposing portions of the layer to radiation selected from EUV, far UV, X-ray and e-beam to form a pattern in which exposed portions of the deposited layer is more cross-linked than unexposed portions of the deposited layer on the substrate. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
-
-
32. A method of forming a patterned photoresist on a substrate comprising:
-
forming a carbon-containing film on the substrate; forming surface layer in the carbon-containing film that is sensitive to radiation; exposing a portion of the carbon-containing film to radiation selected from EUV, far UV, X-ray and e-beam to provide an exposed surface portion; and selectively depositing by atomic layer deposition a metal-containing film only on the exposed regions of the carbon-containing film. - View Dependent Claims (33, 34)
-
Specification