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METHODS FOR ETCHING SUBSTRATES USING PULSED DC VOLTAGE

  • US 20120088371A1
  • Filed: 04/19/2011
  • Published: 04/12/2012
  • Est. Priority Date: 10/07/2010
  • Status: Abandoned Application
First Claim
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1. A method for etching a substrate disposed on a substrate support within a process chamber, comprising:

  • providing a process gas to the process chamber;

    forming a plasma from the process gas;

    applying a pulsed DC voltage to a first electrode disposed within the process chamber; and

    etching the substrate while applying the pulsed DC voltage.

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