Smart Integrated Semiconductor Light Emitting System Including Nitride Based Light Emitting Diodes (LED) And Application Specific Integrated Circuits (ASIC)

• US 20120091466A1
• Filed: 12/02/2011
• Published: 04/19/2012
• Est. Priority Date: 08/13/2009
• Status: Active Grant

• Current Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Original Assignee: Semileds Optoelectronics Company Limited (SemiLEDs Inc)
• Inventors: Doan, Trung Tri, Tan, Tien Wei, Liu, Wen-Huang, Chu, Chen-Fu, Chen, Yung Wei
• Granted Patent: US 8,933,467 B2
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 2924/13033 TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC), and at least one light emitting diode (LED) that includes a Group-III nitride based material such as GaN, InGaN, AlGaN, AlInGaN or other (Ga, In or Al) N-based materials. The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated LED circuit having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.

Claims

1. A light emitting diode (LED) system comprising:

a substrate comprising a plurality of external contacts;

one or more application specific integrated circuits (ASIC) on the substrate having a plurality of input ports in electrical communication with the external contacts on the substrate, and at least one output port; and

at least one light emitting diode (LED) on the substrate in electrical communication with the output port;

the substrate, the external contacts, the application specific integrated circuits (ASIC) and the light emitting diode (LED) configured as an integrated LED circuit.

2. The system of claim 1 wherein the application specific integrated circuits (ASIC) are contained on a semiconductor die

3. The system of claim 1 wherein the application specific integrated circuits (ASIC) are contained on a plurality of semiconductor dice.

4. The system of claim 1 wherein the application specific integrated circuits (ASIC) are contained on the substrate.

5. The system of claim 1 wherein the light emitting diode (LED) comprises a Group-III nitride based material.

6. The system of claim 1 wherein the substrate comprises a material selected from the group consisting of Si, SiC and Al₂O₃.

7. A light emitting diode (LED) system comprising:

a substrate comprising a plurality of external contacts configured as terminal contacts for electrically connecting the system to an outside world;

at least one application specific integrated circuit (ASIC) die mounted to the substrate having a plurality of integrated circuits, a plurality of input ports in electrical communication with the integrated circuits and with the external contacts on the substrate, and at least one output port in electrical communication with the integrated circuits;

at least one light emitting diode (LED) on the substrate in electrical communication with the output port comprising a Group-III nitride based material;

the substrate, the external contacts and the integrated circuits configured to integrate the application specific integrated circuit (ASIC) die and the light emitting diode (LED) into an integrated LED circuit configured to transmit input from the outside world to the application specific integrated circuit (ASIC) die for controlling multiple functions of the light emitting diode (LED) and electrical characteristics of the (LED) system.

8. The system of claim 7 wherein the Group-III nitride based material comprises a material selected from the group consisting of GaN, InGaN, AlGaN and AlInGaN.

9. The system of claim 7 wherein the substrate comprises a material selected from the group consisting of Si, SiC and Al₂O₃.

10. The system of claim 7 wherein the light emitting diode (LED) comprises a vertical light emitting diode (VLED) die.

11. The system of claim 7 wherein the light emitting diode (LED) includes a device substrate comprising a material selected from the group consisting of Si, GaAs, SiC, AlN, Al₂O₃, and sapphire.

12. The system of claim 11 wherein the Group-III nitride based material comprises GaN and the device substrate comprises SiC.

13. The system of claim 13 wherein the application specific integrated circuit (ASIC) die comprises a plurality of dice.

14. A light emitting diode (LED) system comprising:

a semiconductor substrate comprising a plurality of semiconductor devices and a plurality of external contacts in electrical communication with the semiconductor devices configured as terminal contacts for electrically connecting the system to an outside world;

an application specific integrated circuit (ASIC) die mounted to the semiconductor substrate having a plurality of input ports in electrical communication with the semiconductor devices and the external contacts, a plurality of integrated circuits in electrical communication with the input ports, and at least one output port in electrical communication with the integrated circuits;

at least one light emitting diode (LED) mounted to the semiconductor substrate in electrical communication with the output port comprising a Group-III nitride based material;

the semiconductor substrate, the external contacts, the semiconductor devices on the semiconductor substrate, and the integrated circuits on the application specific integrated circuit (ASIC) die configured to form an integrated LED circuit configured to transmit input from the outside world to the application specific integrated circuit (ASIC) die for controlling multiple functions of the light emitting diode and electrical characteristics of the (LED) system.

15. The system of claim 14 wherein the Group-III nitride based material comprises a material selected from the group consisting of GaN, InGaN, AlGaN and AlInGaN.

16. The system of claim 14 wherein the light emitting diode (LED) comprises a vertical light emitting diode (VLED) die.

17. The system of claim 14 wherein the light emitting diode (LED) includes a device substrate comprising a material selected from the group consisting of Si, GaAs, SiC, AlN, Al₂O₃, and sapphire.

18. The system of claim 14 wherein the application specific integrated circuit (ASIC) die comprises a plurality of dice.