STRUCTURE AND METHOD FOR SIMULTANEOUSLY FORMING A THROUGH SILICON VIA AND A DEEP TRENCH STRUCTURE
First Claim
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1. A method of forming a device, comprising:
- providing a substrate;
depositing a pad film on top of the substrate;
simultaneously forming a first trench and a second trench in the substrate, wherein the first trench is wider and deeper than the second trench;
depositing a node dielectric layer on the pad film and on a bottom and sidewalls of both the first trench and the second trench;
depositing a first material over the node dielectric layer to completely fill the second trench and partially fill the first trench;
removing all of the first material from the first trench and some of the first material from the second trench;
depositing a liner on sidewalls of the first trench;
depositing a conductive material to fill the first trench;
planarizing the conductive material;
thinning the substrate to the node dielectric layer at the bottom of the first trench; and
removing the node dielectric layer from the bottom of the first trench.
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Abstract
A through silicon via (TSV) and a deep trench capacitor (DTCap) or a deep trench isolation (DTI) are simultaneously formed on the same substrate by a single mask and a single reactive ion etching (RIE). The TSV trench is wider and deeper that the DTCap or DTI trench. The TSV and DTCap or DTI are formed with different dielectric materials on the trench sidewalls. The TSV and DTCap or DTI are perfectly aligned.
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Citations
25 Claims
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1. A method of forming a device, comprising:
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providing a substrate; depositing a pad film on top of the substrate; simultaneously forming a first trench and a second trench in the substrate, wherein the first trench is wider and deeper than the second trench; depositing a node dielectric layer on the pad film and on a bottom and sidewalls of both the first trench and the second trench; depositing a first material over the node dielectric layer to completely fill the second trench and partially fill the first trench; removing all of the first material from the first trench and some of the first material from the second trench; depositing a liner on sidewalls of the first trench; depositing a conductive material to fill the first trench; planarizing the conductive material; thinning the substrate to the node dielectric layer at the bottom of the first trench; and removing the node dielectric layer from the bottom of the first trench. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a device, comprising:
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providing a substrate; depositing a pad film on top of the substrate; simultaneously forming a wide trench for a through silicon via (TSV) and a narrow trench for a deep trench capacitor (DTCap) in the substrate; depositing a node dielectric layer on the pad film and on a bottom and sidewalls of both the wide trench and the narrow trench; depositing a first conductive material over the node dielectric layer to completely fill the narrow trench and partially fill the wide trench; removing all of the first conductive material from the wide trench and some of the first conductive material from the narrow trench; depositing a liner on sidewalls of the wide trench; depositing a second conductive material to fill the wide trench; planarizing the second conductive material; thinning the substrate to the node dielectric layer at a bottom of the wide trench; and removing the node dielectric layer from the bottom of the wide trench. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a device, comprising:
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providing a substrate; depositing a pad film on top of the substrate; simultaneously forming a through silicon via (TSV) trench and a deep trench isolation (DTI) trench in the substrate; depositing an insulating material to completely fill the DTI trench and partially fill the TSV trench; removing insulting material from the TSV trench and the DTI trench, wherein a spacer liner is formed on sidewalls of the TSV trench; depositing a conductive material to fill the TSV trench; planarizing the conductive material; and thinning the substrate to a bottom of the TSV trench. - View Dependent Claims (20)
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21. A device, comprising:
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a substrate; a first trench simultaneously formed with a second trench in the substrate, wherein the first trench is wider and deeper than the second trench; a node dielectric layer deposited on a bottom and sidewalls of the first trench and on the sidewalls of the second trench; a first material filling the second trench; a liner deposited on the node dielectric layer in the first trench; and a conductive material filling the first trench. - View Dependent Claims (22, 23)
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24. A design structure tangibly embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
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a first trench simultaneously formed with a second trench in a substrate, wherein the first trench is wider and deeper than the second trench; a node dielectric layer deposited on a bottom and sidewalls of the first trench and on the sidewalls of the second trench; a material filling the second trench; a liner deposited on the node dielectric layer in the first trench; and a conductive material filling the first trench. - View Dependent Claims (25)
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Specification