PROTECTION STRUCTURE FOR METAL-OXIDE-METAL CAPACITOR

• US 20120092806A1
• Filed: 01/05/2011
• Published: 04/19/2012
• Est. Priority Date: 10/18/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: HUA, Wei-Chun, CHANG, Chung-Long, CHEN, Chun-Hung, CHAO, Chih-Ping, CHENG, Jye-Yen, TSENG, Hua-Chou
• Granted Patent: US 8,971,014 B2
• Time in Patent Office: Days
• US Class Current: 361/306.3
• CPC Class Codes: H01G 4/005 Electrodes
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 29/43 Electric condenser making

Abstract

A capacitor structure includes first and second sets of electrodes and a plurality of line plugs. The first set of electrodes has a first electrode and a second electrode formed in a first metallization layer among a plurality of metallization layers, wherein the first electrode and the second electrode are separated by an insulation material. The second set of electrodes has a third electrode and a fourth electrode formed in a second metallization layer among the plurality of metallization layers, wherein the third electrode and the fourth electrode are separated by the insulation material. The line plugs connect the second set of electrodes to the first set of electrodes.

Claims

1. A capacitor structure, comprising:

a first set of electrodes having a first electrode and a second electrode formed in a first metallization layer among a plurality of metallization layers, wherein the first electrode and the second electrode are separated by an insulation material;

a second set of electrodes having a third electrode and a fourth electrode formed in a second metallization layer among the plurality of metallization layers, wherein the third electrode and the fourth electrode are separated by the insulation material; and

a plurality of line plugs connecting the second set of electrodes to the first set of electrodes.

2. The capacitor structure of claim 1, wherein the plurality of line plugs comprises a first line plug that connects the first electrode to the third electrode, and a second line plug that connects the second electrode to the fourth electrode.

3. The capacitor structure of claim 1, wherein the second set of electrodes extends above or below the first set of electrodes.

4. The capacitor structure of claim 2, wherein

the first electrode comprises a first bus having first fingers,

the second electrode comprises a second bus having second fingers,

the third electrode comprises a third bus having third fingers,

the fourth electrode comprises a fourth bus having fourth fingers, and

the first line plug connects the first bus to the third bus and the second line plug connects the second bus to the fourth bus.

5. The capacitor structure of claim 4, wherein the first fingers and the second fingers are placed in an alternating pattern and separated by the insulation material and the third fingers and the fourth fingers are placed in an alternating pattern and separated by the insulation material.

6. The capacitor structure of claim 1, wherein a thickness of the line plugs is about 50 nm to about 1000 nm.

7. The capacitor structure of claim 1, wherein a dielectric constant of the insulation material is less than about 3.0.

8. The capacitor structure of claim 1, wherein each line plug is made of a material selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, and combinations thereof.

9. A multi-layer capacitor, comprising:

a first set of electrodes having a first electrode and a second electrode, wherein the first electrode and the second electrode are in a first metallization layer, the first electrode and the second electrode are separated by an insulation material, and further wherein the first electrode comprises a first bus having first fingers and the second electrode comprises a second bus having second fingers;

a second set of electrodes having a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are in a second metallization layer, the third electrode and the fourth electrode are separated by the insulation material, and further wherein the third electrode comprises a third bus having third fingers and the fourth electrode comprises a fourth bus having fourth fingers;

a first line plug connecting the first bus to the third bus; and

a second line plug connecting the second bus to the fourth bus.

10. The multi-layer capacitor of claim 9, wherein the capacitor is a metal-oxide-metal capacitor.

11. The multi-layer capacitor of claim 9, wherein the capacitor is integrated into a memory logic device.

12. The multi-layer capacitor of claim 9, wherein the second set of electrodes extends above or below the first set of electrodes.

13. The multi-layer capacitor of claim 9, wherein each line plug is made of a material selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, and combinations thereof.

14. The multi-layer capacitor structure of claim 9, wherein a thickness of the line plugs is about 50 nm to about 1000 nm.

19. The multi-layer capacitor of claim 9, wherein

the first and third buses are L-shaped as seen in a thickness direction of the capacitor;

and

the first line plug connecting the first bus to the third bus is also L-shaped when seen in the thickness direction of the capacitor.

20. The multi-layer capacitor of claim 19, wherein

the second and fourth buses are L-shaped as seen in the thickness direction of the capacitor;

and

the second line plug connecting the second bus to the fourth bus is also L-shaped when seen in the thickness direction of the capacitor.

15. A method of forming a capacitor structure, said method comprising:

forming a first set of electrodes having a first electrode and a second electrode, wherein the first electrode and the second electrode are in a first metallization layer;

forming a second set of electrodes having a third electrode and a fourth electrode, wherein the third electrode and the fourth electrode are in a second metallization layer;

forming insulation layers between the first set of electrodes and the second set of electrodes;

forming a first line plug connecting the first electrode to the third electrode; and

forming a second line plug connecting the second electrode to the fourth electrode.

16. The method of claim 15, wherein the second set of electrodes extends above or below the first set of electrodes.

17. The method of claim 15, wherein a thickness of the line plugs is about 50 nm to about 1000 nm.

18. The method of claim 15, wherein each line plug is made of a material selected from the group consisting of copper, copper alloy, aluminum, aluminum alloy, and combinations thereof.