TWO SILICON-CONTAINING PRECURSORS FOR GAPFILL ENHANCING DIELECTRIC LINER
First Claim
1. A method for filling a trench with silicon oxide wherein the trench is on a patterned substrate within a substrate processing region of a semiconductor processing chamber, the method comprising the sequential operations of:
- forming a conformal silicon oxide liner layer by concurrently flowing a first silicon-containing precursor, a second silicon-containing precursor and an oxygen-containing precursor into the substrate processing region, wherein the first silicon-containing precursor comprises a Si—
O bond, and the second silicon-containing precursor comprises a Si—
C bond and a Si—
N bond; and
forming a silicon oxide gapfill layer by concurrently flowing the first silicon-containing precursor and the oxygen-containing precursor into the substrate processing region.
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Abstract
Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.
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Citations
19 Claims
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1. A method for filling a trench with silicon oxide wherein the trench is on a patterned substrate within a substrate processing region of a semiconductor processing chamber, the method comprising the sequential operations of:
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forming a conformal silicon oxide liner layer by concurrently flowing a first silicon-containing precursor, a second silicon-containing precursor and an oxygen-containing precursor into the substrate processing region, wherein the first silicon-containing precursor comprises a Si—
O bond, and the second silicon-containing precursor comprises a Si—
C bond and a Si—
N bond; andforming a silicon oxide gapfill layer by concurrently flowing the first silicon-containing precursor and the oxygen-containing precursor into the substrate processing region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification