USING VACUUM ULTRA-VIOLET (VUV) DATA IN MICROWAVE SOURCES
First Claim
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1. A method for processing a substrate using a Vacuum Ultra-Violet/Electron Energy Distribution Function (VUV/EEDf)-related procedure, the method comprising:
- positioning a substrate on a substrate holder in a process chamber configured to perform the VUV/EEDf-related procedure;
creating an initial VUV/EEDf-related pre-processing plasma during a first pre-processing time associated with the VUV/EEDf-related procedure using a microwave source;
determining a first measured Vacuum Ultra-Violet (VUV) radiation value for the initial VUV/EEDf-related pre-processing plasma;
comparing the first measured VUV radiation value to first VUV radiation limits during the first pre-processing time;
performing at least one first corrective action to improve the first measured VUV radiation value when the first measured VUV radiation value exceeds one or more of the first VUV radiation limits during the first pre-processing time; and
creating one or more first VUV/EEDf-related plasmas in the processing chamber during a second pre-processing time associated with the VUV/EEDf-related procedure using the microwave source.
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Abstract
The invention provides an apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDf) data and associated (VUV/EEDf)-related procedures in (VUV/EEDf) etch systems. The (VUV/EEDf)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDf)-related models that can include Multi-Input/Multi-Output (MIMO) models.
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Citations
18 Claims
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1. A method for processing a substrate using a Vacuum Ultra-Violet/Electron Energy Distribution Function (VUV/EEDf)-related procedure, the method comprising:
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positioning a substrate on a substrate holder in a process chamber configured to perform the VUV/EEDf-related procedure; creating an initial VUV/EEDf-related pre-processing plasma during a first pre-processing time associated with the VUV/EEDf-related procedure using a microwave source; determining a first measured Vacuum Ultra-Violet (VUV) radiation value for the initial VUV/EEDf-related pre-processing plasma; comparing the first measured VUV radiation value to first VUV radiation limits during the first pre-processing time; performing at least one first corrective action to improve the first measured VUV radiation value when the first measured VUV radiation value exceeds one or more of the first VUV radiation limits during the first pre-processing time; and creating one or more first VUV/EEDf-related plasmas in the processing chamber during a second pre-processing time associated with the VUV/EEDf-related procedure using the microwave source. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for processing a substrate using a Vacuum Ultra-Violet/Electron Energy Distribution Function (VUV/EEDf)-related procedure, the method comprising:
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positioning a substrate on a substrate holder in an upper portion of a process chamber configured to perform the VUV/EEDf-related procedure; creating an initial VUV/EEDf-related pre-processing plasma during a first pre-processing time associated with the VUV/EEDf-related procedure using a microwave source; determining a first measured Vacuum Ultra-Violet (VUV) radiation value for the initial VUV/EEDf-related pre-processing plasma; comparing the first measured VUV radiation value to first VUV radiation limits during the first pre-processing time; performing at least one first corrective action to improve the first measured VUV radiation value when the first measured VUV radiation value exceeds one or more of the first VUV radiation limits during the first pre-processing time; and creating one or more new VUV/EEDf-related plasmas in the processing chamber during a new processing time associated with the VUV/EEDf-related procedure using the microwave source. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A Vacuum Ultra-Violet/Electron Energy Distribution Function (VUV/EEDf) etch system for processing a substrate using a (VUV/EEDn-related procedure comprising:
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a process chamber comprising a process space having a substrate holder therein; a microwave source coupled to the process chamber, wherein the microwave source comprises a slot antenna and a resonator plate coupled to the slot antenna; a first VUV/EEDf sensor subsystem coupled to the process chamber, wherein the first VUV/EEDf sensor subsystem is configured to measure VUV radiation in the process chamber; a first gas supply system coupled to the process chamber; a pumping system coupled to the process chamber using a pressure control system; and a control system coupled to the microwave source, the first VUV/EEDf sensor subsystem, the first gas supply system, the pumping system, and the pressure control system, wherein the control system is configured to determine if the measured VUV radiation exceeds a VUV radiation limit.
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Specification