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SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20120097942A1
  • Filed: 10/17/2011
  • Published: 04/26/2012
  • Est. Priority Date: 10/20/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor film comprising indium;

    a gate electrode comprising a compound conductor; and

    an insulating film between the oxide semiconductor film and the gate electrode,wherein the compound conductor comprises indium and nitrogen, andwherein a band gap of the compound conductor is less than 2.8 eV.

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