SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A semiconductor device comprising:
- an oxide semiconductor film comprising indium;
a gate electrode comprising a compound conductor; and
an insulating film between the oxide semiconductor film and the gate electrode,wherein the compound conductor comprises indium and nitrogen, andwherein a band gap of the compound conductor is less than 2.8 eV.
2 Assignments
0 Petitions
Accused Products
Abstract
It is an object of an embodiment of the present invention to reduce leakage current between a source and a drain in a transistor including an oxide semiconductor. As a first gate film in contact with a gate insulating film, a compound conductor which includes indium and nitrogen and whose band gap is less than 2.8 eV is used. Since this compound conductor has a work function of greater than or equal to 5 eV, preferably greater than or equal to 5.5 eV, the electron concentration in an oxide semiconductor film can be maintained extremely low. As a result, the leakage current between the source and the drain is reduced.
-
Citations
21 Claims
-
1. A semiconductor device comprising:
-
an oxide semiconductor film comprising indium; a gate electrode comprising a compound conductor; and an insulating film between the oxide semiconductor film and the gate electrode, wherein the compound conductor comprises indium and nitrogen, and wherein a band gap of the compound conductor is less than 2.8 eV. - View Dependent Claims (2, 3, 4, 5)
-
-
6. A semiconductor device comprising:
-
an oxide semiconductor film comprising indium; an insulating film over the oxide semiconductor film; and a gate electrode comprising a compound conductor over the insulating film, wherein the compound conductor comprises indium and nitrogen, and wherein a band gap of the compound conductor is less than 2.8 eV. - View Dependent Claims (7, 8, 9, 10)
-
-
11. A semiconductor device comprising:
-
a gate electrode comprising a compound conductor; an insulating film over the gate electrode; and an oxide semiconductor film comprising indium over the insulating film, wherein the compound conductor comprises indium and nitrogen, and wherein a band gap of the compound conductor is less than 2.8 eV. - View Dependent Claims (12, 13, 14, 15)
-
-
16. A method for manufacturing a semiconductor device, comprising the steps of:
-
providing a gate electrode comprising a compound conductor; providing an insulating film over and in contact with the gate electrode; and providing an oxide semiconductor film comprising indium over the insulating film, wherein the compound conductor comprises indium and nitrogen, and wherein a band gap of the compound conductor is less than 2.8 eV. - View Dependent Claims (17, 18)
-
-
19. A method for manufacturing a semiconductor device, comprising the steps of:
-
providing an oxide semiconductor film comprising indium; providing an insulating film over the oxide semiconductor film; and providing a gate electrode comprising a compound conductor over and in contact with the insulating film, wherein the compound conductor comprises indium and nitrogen, and wherein a band gap of the compound conductor is less than 2.8 eV. - View Dependent Claims (20, 21)
-
Specification