×

THIN FILM TRANSISTOR AND DISPLAY DEVICE USING THE SAME

  • US 20120097965A1
  • Filed: 03/25/2011
  • Published: 04/26/2012
  • Est. Priority Date: 10/22/2010
  • Status: Active Grant
First Claim
Patent Images

1. A thin film transistor comprising:

  • a semiconductor layer comprising a channel region, a source region, a drain region, a light-doped source region, and a light-doped drain region;

    a gate electrode overlapping the channel region;

    a source electrode contacting the source region; and

    a drain electrode contacting the drain region,wherein;

    the channel region comprises a main channel portion, a source channel portion, and a drain channel portion,the source channel portion and the drain channel portion are extended from the main channel portion and separated from each other,the light-doped source region is disposed between the source channel portion and the source region, andthe light-doped drain region is disposed between the drain channel portion and the drain region.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×