METHOD OF READING DATA IN A NON-VOLATILE MEMORY DEVICE
First Claim
1. A method of reading data in a non-volatile memory device, the method comprising:
- sensing a temperature of a memory cell;
setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature so that a difference of the first voltage and the second voltage is increased as the temperature increases;
precharging a bit line in accordance with the set first voltage; and
sensing data of the memory cell in accordance with the set second voltage.
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Abstract
A method of reading data in a non-volatile memory device compensates for a change in a reading/verifying result in accordance with a change of temperature. The method includes sensing a temperature of a memory cell, setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature so that a difference of the first voltage and the second voltage is increased as the temperature increases, precharging a bit line in accordance with the set first voltage, and sensing data of the memory cell in accordance with the set second voltage. The method may read/verify data constantly even though a temperature is changed.
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Citations
20 Claims
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1. A method of reading data in a non-volatile memory device, the method comprising:
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sensing a temperature of a memory cell; setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature so that a difference of the first voltage and the second voltage is increased as the temperature increases; precharging a bit line in accordance with the set first voltage; and sensing data of the memory cell in accordance with the set second voltage. - View Dependent Claims (2, 3, 4, 5)
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6. A non-volatile memory device, comprising:
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a cell string comprising a plurality of memory cells, wherein the cell string is coupled to a bit line; a temperature sensor configured to sense a temperature of the memory cells; a bit line sensing circuit configured to precharge the bit line in response to a first bit line sensing signal and sense a voltage level of the bit line to sense data of the memory cell in response to a second bit line sensing signal; and a control circuit configured to output the first bit line sensing signal of a first voltage and the second bit line sensing signal of a second voltage in accordance with the sensed temperature, wherein the difference of the first voltage and the second voltage is increased as the temperature increases. - View Dependent Claims (7, 8, 9, 10, 11, 12)
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13. A method of reading data in a non-volatile memory device, the method comprising:
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sensing a temperature of a memory cell; setting a first voltage and a second voltage of a bit line sensing signal in accordance with the sensed temperature so that a difference of the first voltage and the second voltage is increased as the temperature is increased; setting a time interval for evaluating a voltage level of a bit line in accordance with the sensed temperature; precharging the bit line in accordance with the set first voltage; evaluating the voltage level of the bit line during the set evaluation time interval; and sensing data of the memory cell in accordance with the set second voltage. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification