Reflector, Manufacture Method Thereof And Light-Emitting Device Including The Reflector
First Claim
1. A reflector for a GaN-based light-emitting device, wherein the reflector is formed on a p-type GaN-based epitaxial layer and comprises:
- a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer wherein the epitaxial layer comprises the p-type GaN-based epitaxial layer; and
a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal.
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Abstract
A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-haled light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.
12 Citations
9 Claims
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1. A reflector for a GaN-based light-emitting device, wherein the reflector is formed on a p-type GaN-based epitaxial layer and comprises:
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a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer wherein the epitaxial layer comprises the p-type GaN-based epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. - View Dependent Claims (2)
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3. A method for manufacturing a reflector for a GaN-based light-emitting device, comprising:
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1) forming a light-emitting epitaxial layer on a substrate, the light-emitting epitaxial layer comprising a p-type GaN-based epitaxial layer on its surface; 2) forming a un-doped GaN epitaxial layer on the p-type GaN-based epitaxial layer; 3) etching the un-doped GaN epitaxial layer by electrochemical etching, which stops at a surface of the p-type GaN-based epitaxial layer, such that a whisker topography is formed on the un-doped GaN epitaxial layer, and part of the p-type GaN-based epitaxial layer is exposed; 4) forming a metal reflective layer on both the p-type GaN-based epitaxial layer and the whisker. - View Dependent Claims (4, 5, 6, 7)
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8. A GaN-based light-emitting device, comprising:
an epitaxial structure comprising an n-type GaN-based epitaxial layer, an active layer and a p-type GaN-based epitaxial layer; and
a p-type reflector at the side of the p-type GaN-based epitaxial layer, wherein the p-type reflector comprises;a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of the epitaxial structure; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. - View Dependent Claims (9)
Specification