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Reflector, Manufacture Method Thereof And Light-Emitting Device Including The Reflector

  • US 20120104410A1
  • Filed: 09/15/2011
  • Published: 05/03/2012
  • Est. Priority Date: 10/29/2010
  • Status: Active Grant
First Claim
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1. A reflector for a GaN-based light-emitting device, wherein the reflector is formed on a p-type GaN-based epitaxial layer and comprises:

  • a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer wherein the epitaxial layer comprises the p-type GaN-based epitaxial layer; and

    a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal.

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