BI-DIRECTIONAL SCR ESD DEVICE

• US 20120104459A1
• Filed: 01/07/2012
• Published: 05/03/2012
• Est. Priority Date: 09/22/2009
• Status: Abandoned Application

• Current Assignee: Richtek Technology Corporation (MediaTek, Inc.)
• Original Assignee: Richtek Technology Corporation (MediaTek, Inc.)
• Inventors: Huang, Chih-Feng
• Application Number:
  US13/345,695
• Publication Number:
  US 20120104459A1
• Time in Patent Office: Days
• US Class Current: 257/173
• CPC Class Codes: H01L 27/0262 including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
• CPC Class Codes: H01L 29/87 Thyristor diodes, e.g. Shockley diodes, break-over diodes

Abstract

The present invention discloses a bi-directional SCR ESD device, comprising: a substrate; a first well located in the substrate, which is floating and has a first conductivity type; a second well and a third well both located in the first well and both having a second conductivity type, the second well and the third well being separated from each other; a first high density doped region of the first conductivity type and a second high density doped region of the second conductivity type located in the second well; and a third high density doped region of the first conductivity type and a fourth high density doped region of the second conductivity type located in the third well.

Claims

1. -3. (canceled)

4. A bi-directional silicon controlled rectifier (SCR) electro-static discharge (ESD) device comprising:

a substrate;

a first well located in the substrate, which is floating and has a first conductivity type;

a second well and a third well both located in the first well and both having a second conductivity type, the second well and the third well being separated from each other;

a first high density doped region of the first conductivity type and a second high density doped region of the second conductivity type located in the second well;

a third high density doped region of the first conductivity type and a fourth high density doped region of the second conductivity type located in the third well; and

a fifth high density doped region located at one or more of the following locations;

(1) at a junction area between the first and second wells,

(2) at a junction area between the first and third wells,

(3) in the first well and with a predetermined distance from a junction area between the first and second wells,

(4) in the first well and with a predetermined distance from a junction area between the first and third wells,

(5) in the second well and with a predetermined distance from a junction area between the first and second wells, or

(6) in the third well and with a predetermined distance from a junction area between the first and third wells.

5. The bi-directional SCR ESD device of claim 4, wherein when the fifth high density doped region is located at the junction area between the first and second wells, the fifth high density doped region is the first or second conductivity type.

7. The bi-directional SCR ESD device of claim 4, wherein when the fifth high density doped region is located at the junction area between the first and third wells, the fifth high density doped region is the first or second conductivity type.

9. The bi-directional SCR ESD device of claim 4, wherein when the fifth high density doped region is located in the first well and with the predetermined distance from the junction area between the first and second wells, the fifth high density doped region is the first conductivity type.

11. The bi-directional SCR ESD device of claim 4, wherein when the fifth high density doped region is located in the first well and with the predetermined distance from the junction area between the first and third wells, the fifth high density doped region is the first conductivity type.

13. The bi-directional SCR ESD device of claim 4, wherein when the fifth high density doped region is located in the second well and with the predetermined distance from the junction area between the first and second wells, the fifth high density doped region is the second conductivity type.

15. The bi-directional SCR ESD device of claim 4, wherein when the fifth high density doped region is located in the third well and with the predetermined distance from the junction area between the first and third wells, the fifth high density doped region is the second conductivity type.

16. The isolated SCR ESD device of claim 4, wherein the first conductivity type is N-type and the second conductivity type is P-type.

17. The bi-directional SCR ESD device of claim 4, wherein the first and second high density doped regions are coupled to a positive voltage, a negative voltage, or ground.

18. The bi-directional SCR ESD device of claim 4, wherein the third and fourth high density doped regions are coupled to a positive voltage, a negative voltage, or ground.

6. (canceled)

8. (canceled)

10. (canceled)

12. (canceled)

14. (canceled)