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HIGH VOLTAGE DRAIN EXTENSION ON THIN BURIED OXIDE SOI

  • US 20120104497A1
  • Filed: 10/26/2011
  • Published: 05/03/2012
  • Est. Priority Date: 10/28/2010
  • Status: Active Grant
First Claim
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1. An integrated circuit, comprising:

  • a silicon on insulator (SOI) substrate, including;

    a handle wafer, of semiconductor material having a first conductivity type;

    a buried oxide layer, of dielectric material, located on a top surface of said handle wafer; and

    an SOI film of semiconductor material, located on a top surface of said buried oxide layer; and

    an extended drain metal oxide semiconductor (MOS) transistor, including;

    a region located in said SOI film, said region having an opposite conductivity type from said handle wafer; and

    a through substrate diode located in said region, including;

    a through substrate via extending from a top surface of said SOI film through said buried oxide layer into said handle wafer;

    an electrically conductive via fill plug in said through substrate via, said via fill plug making electrical contact to said SOI film adjacent to said through substrate vias and to said handle wafer; and

    a p-n junction adjacent to a boundary of said through substrate via.

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