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Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Including Resistance Change Material and Method of Operating

  • US 20120106234A1
  • Filed: 09/26/2011
  • Published: 05/03/2012
  • Est. Priority Date: 08/22/2008
  • Status: Active Grant
First Claim
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1. A semiconductor memory cell comprising:

  • a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to said cell; and

    a nonvolatile memory comprising a resistance change element configured to store data stored in said floating body under any one of a plurality of predetermined conditions.

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