METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR CRYSTAL GROWTH APPARATUS

• US 20120107990A1
• Filed: 06/28/2011
• Published: 05/03/2012
• Est. Priority Date: 10/27/2010
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sekiguchi, Hideki
• Application Number:
  US13/170,244
• Publication Number:
  US 20120107990A1
• Time in Patent Office: Days
• US Class Current: 438/47
• CPC Class Codes: C23C 16/303 Nitrides
• CPC Class Codes: C23C 16/4581 characterised by material of construction or surface finish of the means for supporting the substrate
• CPC Class Codes: C23C 16/46 characterised by the method used for heating the substrate C23C16/48, C23C16/50 take precedence
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

According to one embodiment, a method is disclosed for manufacturing a semiconductor light emitting device. The method can include a crystal growth process. The crystal growth process is configured to grow a stacked structure of compound semiconductor composed of a group III element and a group V element on a substrate by a metal organic chemical vapor deposition process. The substrate is mounted on a substrate mounting portion provided on a surface of a tray placed above a heating device. A compound semiconductor film includes at least one group III element forming the stacked structure and at least one group V element forming the stacked structure. The compound semiconductor film is previously formed on a surface of the substrate mounting portion before growing the stacked structure. The substrate is mounted on the substrate mounting portion via the compound semiconductor film, and the stacked structure is grown on the substrate.

Claims

1. A method for manufacturing a semiconductor light emitting device, comprising:

a crystal growth process configured to grow a stacked structure of compound semiconductor composed of a group III element and a group V element on a substrate by a metal organic chemical vapor deposition process, the substrate being mounted on a substrate mounting portion provided on a surface of a tray placed above a heating device, the surface being located on a side opposite to the heating device,

a compound semiconductor film including one group III element forming the stacked structure of the compound semiconductor and one group V element forming the stacked structure of the compound semiconductor being previously formed on a surface of the substrate mounting portion before growing the stacked structure, the substrate being mounted on the substrate mounting portion via the compound semiconductor film, and the stacked structure being grown on the substrate.

2. The method according to claim 1, wherein the substrate mounting portion includes a depression formed on the surface of the tray, and the compound semiconductor film is formed entirely on a bottom surface of the depression.

3. The method according to claim 2, wherein the substrate mounting portion further includes a step difference at an upper end of a sidewall of the depression so as to contour the depression.

4. The method according to claim 3, wherein a middle step is formed by the step difference at the sidewall of the depression, and the substrate is supported by the middle step so that the substrate is spaced from the compound semiconductor film.

5. The method according to claim 1, wherein on the surface as viewed from the side opposite to the heating device, the compound semiconductor film formed on the substrate mounting portion is not formed outside the substrate.

6. The method according to claim 1, wherein with the tray further mounted in an opening of a susceptor, the stacked structure of the compound semiconductor is grown.

7. The method according to claim 1, wherein each layer of the stacked structure of the compound semiconductor is made of a nitride semiconductor in which the group III element includes at least one element of In, Al, and Ga, and the group V element includes N.

8. The method according to claim 2, wherein the compound semiconductor film is made of GaN.

9. The method according to claim 2, wherein the substrate is in contact with the compound semiconductor film.

10. A semiconductor crystal growth apparatus for growing a stacked structure of compound semiconductor composed of a group III element and a group V element on a substrate by a metal organic chemical vapor deposition process, the apparatus comprising:

a heating device;

a tray placed above the heating device and including a substrate mounting portion configured to mount the substrate on a surface located on a side opposite to the heating device; and

a raw material supply device,

a compound semiconductor film including one group III element forming the stacked structure of the compound semiconductor and one group V element forming the stacked structure of the compound semiconductor being formed on a surface of the substrate mounting portion.

11. The apparatus according to claim 10, wherein the substrate mounting portion includes a depression formed on the surface of the tray, and the compound semiconductor film is formed entirely on a bottom surface of the depression.

12. The apparatus according to claim 11, wherein the substrate mounting portion further includes a step difference at an upper end of a sidewall of the depression so as to contour the depression.

13. The apparatus according to claim 12, wherein a middle step is formed by the step difference at the sidewall of the depression, and the substrate is supported by the middle step so that the substrate is spaced from the compound semiconductor film.

14. The apparatus according to claim 10, wherein on the surface as viewed from the side opposite to the heating device, the compound semiconductor film formed on the substrate mounting portion is not formed outside the substrate.

15. The apparatus according to claim 10, further comprising:

a susceptor including an opening,

the tray being mounted in the opening of the susceptor.

16. The apparatus according to claim 10, wherein each layer of the stacked structure of the compound semiconductor is made of a nitride semiconductor in which the group III element includes at least one element of In, Al, and Ga, and the group V element includes N.

17. The apparatus according to claim 11, wherein the compound semiconductor film is made of GaN.

18. The apparatus according to claim 11, wherein the substrate is in contact with the compound semiconductor film.